ZHCS125B April   2011  – July 2016 UCC25710

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Multi-transformer Architecture
      2. 8.3.2 Start-Up and Non-Dimming Operation
      3. 8.3.3 Dimming Operation
      4. 8.3.4 Fault Condition Operation
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Determining Transformer and Resonant Circuit Parameters
        2. 9.2.2.2  CS (Output Current Sense)
        3. 9.2.2.3  ICOMP (Current Amplifier Compensation)
        4. 9.2.2.4  SS (Soft Start)
        5. 9.2.2.5  FMAX (Maximum VCO Frequency)
        6. 9.2.2.6  FMIN (Minimum VCO Frequency)
        7. 9.2.2.7  GD1 and GD2 (Gate Drive 1 and 2)
        8. 9.2.2.8  LEDSW (LED Switch Drive)
        9. 9.2.2.9  DSR (Dimming Slew Rate)
        10. 9.2.2.10 DTY (Dimming Duty-Cycle Average)
        11. 9.2.2.11 DADJ (Dimming Duty-Cycle Adjust)
        12. 9.2.2.12 OV (Output Overvoltage)
        13. 9.2.2.13 UV (Output Undervoltage)
        14. 9.2.2.14 CL (Current Limit)
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 接收文档更新通知
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage VCC 20 V
LEDSW output current ILEDSW ±2 mA
VREF output current IVREF –20
Gate drive RMS current continuous GD1, GD2 IGD1, IDG2 25
Gate drive voltage, GD1 GD2 VGD1, VGD2 –0.5 VCC + 0.5 V
Voltage CS, CL, OV, UV, BLON, DIM, CREF –0.5 7
Lead temperature 1.60 mm (1/16 inch) from case for 10 s 260 °C
Operating junction temperature, TJ –55 150
Storage temperature, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

all voltages are with respect to GND; currents are positive into and negative out of the specified terminal. -40°C < TJ = TA < 125°C (unless otherwise noted)
MIN NOM MAX UNIT
VCC Operating input voltage 11 18 V
CVCC VCC bypass capacitor 0.47 µF
Operating junction temperature –40 125 °C
Switching frequency at gate drive outputs 25 350 kHz
VCREF Input voltage (linear range) 0.6 1.65 2.7 V
VCREF Input voltage (using internal clamps) 0 VVREF
CVREF VREF bypass capacitor 0.22 1 2.2 µF
CSS SS capacitor 10 250 nF
CICOMP ICOMP capacitor 0.5 47
CDTY DTY capacitor 0.22 6.8 µF
CDSR DSR capacitor 0 2500 pF

7.4 Thermal Information

THERMAL METRIC(1) UCC25710 UNIT
DW (SOIC)
20 PINS
RθJA Junction-to-ambient thermal resistance 79 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43 °C/W
RθJB Junction-to-board thermal resistance 44 °C/W
ψJT Junction-to-top characterization parameter 16 °C/W
ψJB Junction-to-board characterization parameter 44 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

TA = –40°C to 125°C, TA = TJ, VVCC = 12 V, VBLON = 3 V, VUV = 3 V, VOV = 2 , VCL = 0 V, RMIN = 100 kΩ, RMAX = 4.99 kΩ, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY INPUT
VVCCMAX VCC operating voltage 18 V
IOFF Supply current, off VVCC = 8 V 160 250 µA
ION Supply current, on Switching frequency = FMIN (30 KHz) 1.4 2.1 mA
IDISABLE Supply current, disabled VVCC = 12 V, VBLON = 0 V 240 350 µA
ILATCHOFF Supply current, latched off Fault latch set 600 900
UNDERVOLTAGE LOCKOUT
VVCCON VCC turnon threshold VVCC low-to-high 8.6 9.3 10.1 V
VVCCOFF VCC turnoff threshold VVCC high-to-low 8.3 9 9.6
VVCCHYS Hysteresis 0.2 0.35 0.5
5-V REFERENCE OUTPUT
VVREF 5-V Reference IVREF = 0 to 10 mA, TJ = 25°C 4.95 5 5.05 V
VVREF 5-V Reference IVREF = 0 to 10 mA, TJ = –40°C to 125°C 4.85 5 5.15
CURRENT AMPLIFIER
VICOMPIOS Input offset voltage VCREF = 1.65 V, ICOMP tied to CS –15 15 mV
ICS Input bias current at CS input VCREF = 1.65 V, VCS = 1.65 V –0.25 0.25 µA
ICR Input bias current at CREF input VCREF = 1.65 V, VCS = 1.65 V –0.25 0.25
VICOMPHI ICOMP high VCS = 0 V, VCREF = 1.65 V, IICOMP = 50 µA 4.6 4.85 V
VICOMPLO ICOMP low VCS = 3 V, VCREF = 1.65 V, IICOMP = –50 µA 0.35 0.65
GMICOMP ICOMP transconductance ICOMP tied to CS, IICOMP = –100 µA to 100 µA 440 510 600 µs
IICOMPSRC Source current ICOMP VCS = 0.65 V, VCREF = 1.65 V, VICOMP = 2.5 V 120 150 180 µA
IICOMPSNK Sink current ICOMP VCS = 2.65 V, VCREF = 1.65 V, VICOMP = 2.5 V 195 245 295
IICOMPLGK LED off leakage current at ICOMP VDIM = 0 V, VICOMP = 2.5 V, TJ = –40°C to 85°C –0.1 0.1
VCREFCLO CREF low Clamp VCREF = 0 V, ICOMP tied to CS, regulating voltage at ICOMP 0.475 0.5 0.535 V
VCREFCHI CREF high Clamp VCREF = 3 V, ICOMP tied to CS, regulating voltage at ICOMP 2.65 2.8 2.95
SOFT START
ISS Soft-start charging current VSS = 2.25 V 2 2.5 3 µA
RSSDC Soft-start discharge resistance VSS = 1 V 3.4 5 kΩ
VSSTH Soft-start threshold SS clamp released 3.95 4.15 4.4 V
TRSTDLY Reset delay From UVLO turnon to start of soft start 7 10 13 ms
VOLTAGE CONTROLLED OSCILLATOR
FMIN FMIN GD1, GD2 RMIN = 100 kΩ, VICOMP = 5 V 29.5 30.5 31.5 kHz
FMAX FMAX GD1, GD2 RMIN = 100 kΩ, RMAX = 4.99 kΩ, VICOMP = 0.95 V 275 300 320
TDT Dead-time GD1, GD2 RMIN = 100 kΩ, VICOMP = 3 V 400 500 600 ns
TMATCH ON-time mismatching RMIN = 100 kΩ, VICOMP = 3 V –50 50
VVCOTHLO VICOMP VCO Threshold Low Disable GD1, GD2, VICOMP high to low 0.8 0.9 0.95 V
VVCOMAX VICOMP for FMIN Frequency reaches FMIN 3.8 4 4.2
GATE DRIVERS
VGDHI GD1, GD2 VOUT high IGD1, IGD2 = –20 mA, below VCC 1.8 3 V
RGDHSRES GD1, GD2 ON-resistance high IGD1, IGD2 = –20 mA 14 30 Ω
VGDLO GD1, GD2 VOUT low IGD1, IGD2 = 20 mA 0.08 0.2 V
RGDLSRES GD1, GD2 ON-resistance low IGD1, IGD2 = 20 mA 4 10 Ω
TGDRISE GD1, GD2 output rise time CGD = 1 nF, 1 V to 9 V 25 35 ns
TGDFALL GD1, GD2 output fall time CGD = 1 nF, 9 V to 1 V 20 30
UNDERVOLTAGE PROTECTION
VUVTH Undervoltage threshold High-to-low on UV input 2.27 2.4 2.53 V
VUVHY Undervoltage threshold hysteresis 190 240 300 mV
IUV UV input bias current VUV = 2.7 V –0.25 0.25 µA
OVERVOLTAGE PROTECTION
VOVTH Overvoltage threshold Low-to-high on OV input 2.46 2.6 2.74 V
VOVHY Overvoltage threshold hysteresis 190 240 300 mV
IOV OV input bias current VOV = 2.3 V –0.25 0.25 µA
CURRENT LIMIT PROTECTION
VCLTH Current limit threshold Low-to-high on CL input 0.9 0.95 1 V
VCLHY Current limit threshold hysteresis 375 475 525 mV
VCLLTH Current limit latching threshold Low-to-high on CL input 1.75 1.9 2.05 V
ICL CL input bias current VCL = 2.2 V –0.25 0.25 µA
THERMAL SHUTDOWN
tTSD Junction temperature at thermal shutdown Temperature rising 135 160 185 °C
tHYS Thermal hysteresis 25 45
BACKLIGHT ON INPUT
RBLON RBLON pulldown resistance Pull down to GND 100 200 350 kΩ
VBLON Enable threshold 0.8 1.2 1.6 V
PWM DIMMING
VDIM Dimming input threshold 1.2 1.5 1.8 V
RDIM DIM pullup resistance Pullup resistance to VREF, VDIM = 0 V – 4.5 V 140 180 240 kΩ
VLEDSWHI High-level at LEDSW output ILEDSW = –100 µA, below VCC, VDIM = 3 V 0.4 1 V
VLEDSWLO Low-level at LEDSW output ILEDSW = 100 µA, VDIM = 0 V 0.2 0.5
RLEDSWHI High-level output resistance ILEDSW = –500 µA – 0 µA, VDIM = 3 V 4 6 kΩ
RLEDSWLO Low-level output resistance ILEDSW = 500 µA – 0 µA, VDIM = 0 V 2 3
RDTY DTY output resistance VDTY = 0 V – 2.5 V , VDIM = 0 V 30 40 50
VDTYH DTY max level VDIM = 0 V 2.45 2.6 2.7 V
VDTYL DTY min level VDIM = 3 V 0.05 0.1 0.15
IDADJCH DADJ charging current VDADJ = 2.5 V, VDIM = 0 V 16 20 25 µA
RDADJDC DADJ discharge resistance VDADJ = 0.5 V, VDIM = 3 V 1 1.5 kΩ
TDADJ DADJ delay CADJ = 2.2 nF, VDTY = 2.6 V, delay from DIM high-to-low to DSR discharge 225 275 330 µs
IDSRCH DSR slew rate charge current VDSR = 2.5 V, VICOMP = 4 V, VDIM = 3 V 38 44 50 µA
IDSRDC DSR slew rate discharge current VDSR = 2.5 V, VICOMP = 4 V, VDIM = 0 V 38 44 50
VDSRCL DSR clamp above ICOMP VICOMP = 2 V, level above VICOMP 0.45 0.7 0.95 V

7.6 Typical Characteristics

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Figure 1. Supply Current vs Dimming Duty Cycle
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Figure 3. Supply Current vs Temperature
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Figure 5. Reference Voltage vs Temperature
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Figure 7. GMICOMP vs Temperature
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Figure 9. Maximum Switching Frequency vs Temperature
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Figure 11. Gate Driver Outputs (Rising Edge) vs Time
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Figure 13. DSR Currents vs Temperature
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Figure 15. LLC ON-Time Extension vs Temperature
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Figure 2. VVCCON and VVCOFF Threshold vs Temperature
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Figure 4. IDISABLE and IOFF Supply Current vs Temperature
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Figure 6. Output Current (ICOMP) vs Input Voltage (CS)
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Figure 8. Minimum Switching Frequency vs Temperature
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Figure 10. Gate Drive Dead Time vs Temperature
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Figure 12. Gate Driver Outputs (Falling Edge) vs Time
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Figure 14. LLC ON-Time Extension vs Dimming Duty Cycle
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Figure 16. LEDSW Rise and Fall vs Time