SLUS846C September   2008  – June 2015 UCC25600

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Soft Start
      2. 7.3.2 Overcurrent Protection
      3. 7.3.3 Gate Driver
      4. 7.3.4 Overtemperature Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Burst-Mode Operation
      2. 7.4.2 VCC
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Principal of Operation
      2. 8.1.2 Adjustable Dead Time
      3. 8.1.3 Oscillator
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MINMAXUNIT
Supply voltage, VCC22V
Voltage, GD1, GD2–0.5 VCC + 0.5V
Gate drive current – continuous, GD1, GD2±25mA
Current, RT–5mA
Current, DT–0.7mA
Lead temperature (10 seconds)260°C
Operating junction temperature, TJ–40 125°C
Storage temperature, Tstg–65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)±2000V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MINNOMMAXUNIT
VCC input voltage from a low-impedance source 11.5 18.0V
RT resistance18.666
DT resistance3.339
SS capacitor0.011μF

6.4 Thermal Information

THERMAL METRIC(1)UCC25600UNIT
D (SOIC)
8 PINS
RθJAJunction-to-ambient thermal resistance 118.5°C/W
RθJC(top)Junction-to-case (top) thermal resistance 72.5°C/W
RθJBJunction-to-board thermal resistance 58.9°C/W
ψJTJunction-to-top characterization parameter 24.1°C/W
ψJBJunction-to-board characterization parameter 58.4°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
BIAS SUPPLY (VCC)
VCC current, disabledSS = 0 V 11.5mA
VCC current, enabledSS = 5 V, CGD1 = CGD2 = 1 nF2.557.5
VCC current, UVLOVCC = 9 V100400μA
VUVLOUVLO turn-on thresholdMeasured at VCC rising9.910.511.1V
UVLO turn-off thresholdMeasured at VCC falling8.99.510.1
UVLO hysteresisMeasured at VCC 0.711.3
VOVPOVP turn-off thresholdMeasured at VCC rising182022
OVP turn-on thresholdMeasured at VCC falling161820
OVP hysteresisMeasured at VCC 1.522.5
DEAD TIME (DT)
TDTDead time RDT = 16.9 kΩ390420450ns
OSCILLATOR
FSW(min)Minimum switching frequency at GD1, GD2–40°C to 125°C40.0441.7043.36kHz
–20°C to 105°C40.4541.7042.95
KICO Switching frequency gain/I (RT)RRT = 4.7 kΩ, IRT = 0 to 1 mA6080100Hz/μA
GD1, GD2 on time mismatching–5050ns
FSW_BMSwitching frequency starting burst modeSS = 5 V300350400kHz
Switching frequency to come out of burst modeSS = 5 V280330380
FSW(start)Switching frequency at soft-start–40°C to 125°C122142.5162
–20°C to 105°C125142.5160
EXTERNAL DISABLE/SOFT START
Enable thresholdMeasure at SS rising1.11.21.3V
Disable threshold Measured at SS falling0.8511.1
Disable hysteresisMeasured at SS0.150.35
Disable prop. delayMeasured between SS (falling) and GD2 (falling)250500750ns
ISSSource current on ISS pinVSS = 0.5 V–225–175–125μA
Source current on ISS pinVSS = 1.35 V–5.5–5–4.5
PEAK CURRENT LIMIT
VOC1(off)Level 1 overcurrent threshold – VOC rising0.911.1V
VOC2(off)Level 2 overcurrent latch threshold – VOC rising1.82.02.2
VOC1(on)Level 1 overcurrent threshold – VOC falling0.50.60.7
Td_OCPropagation delay60200500ns
IOCOC bias currentVOC = 0.8 V–200200nA
GATE DRIVE
GD1, GD2 output voltage high IGD1, IGD2 = −20 mA911V
GD1, GD2 on resistance highIGD1, IGD2 = −20 mA1230Ω
GD1, GD2 output voltage lowIGD1, IGD2 = 20 mA0.080.2V
GD1, GD2 on resistance lowIGD1, IGD2 = 20 mA410Ω
Rise time GDx1 V to 9 V, CLOAD = 1 nF1835ns
Fall time GDx9 V to 1 V, CLOAD = 1 nF1225
GD1, GD2 output voltage during UVLOVCC = 6 V, IGD1, IGD2 = 1.2 mA0.51.75V
THERMAL SHUTDOWN
Thermal shutdown threshold160°C
Thermal shutdown recovery threshold140

6.6 Typical Characteristics

At VCC = 12 V, RRT = 4.7 kΩ, RDT = 16.9 kΩ, VSS = 5 V, VOC = 0 V; all voltages are with respect to GND, TJ = TA = 25°C, unless otherwise noted.
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Figure 1. Bias Supply Current vs Bias Supply Voltage
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Figure 3. Dead Time vs DT Current
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Figure 5. Gate Drive Falling, VCC = 15 V
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Figure 7. Overcurrent Propagation Delay vs Temperature
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Figure 9. VCC Overvoltage Threshold vs Temperature
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Figure 11. On-time Mismatch vs Switching Frequency
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Figure 2. Switching Frequency vs RT Current
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Figure 4. Dead Time vs DT Resistor
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Figure 6. Gate Drive Rising, VCC = 15 V
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Figure 8. UVLO Threshold vs Temperature
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Figure 10. Overcurrent Threshold vs Temperature