ZHCSCZ1B june   2014  – may 2023 TPS65262-1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Adjusting the Output Voltage
      2. 8.3.2  Enable and Adjusting UVLO
      3. 8.3.3  Soft-Start Time
      4. 8.3.4  Power-Up Sequencing
        1. 8.3.4.1 External Power Sequencing
        2. 8.3.4.2 Automatic Power Sequencing
      5. 8.3.5  V7V Low Dropout Regulator and Bootstrap
      6. 8.3.6  Out-of-Phase Operation
      7. 8.3.7  Output Overvoltage Protection (OVP)
      8. 8.3.8  PSM
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Overcurrent Protection (OCP)
        1. 8.3.10.1 High-Side MOSFET OCP
        2. 8.3.10.2 Low-Side MOSFET OCP
      11. 8.3.11 Power Good
      12. 8.3.12 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VIN < 4.5 V (Minimum VIN)
      2. 8.4.2 Operation With EN Control
      3. 8.4.3 Operation at Light Loads
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Inductor Selection
        2. 9.2.2.2 Output Capacitor Selection
        3. 9.2.2.3 Input Capacitor Selection
        4. 9.2.2.4 Loop Compensation
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Mechanical, Packaging, and Orderable Information

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8.3.10.2 Low-Side MOSFET OCP

While the low-side MOSFET is turned on, its conduction current is monitored by the internal circuitry. During normal operation, the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side MOSFET sourcing current is compared to the internally set low-side sourcing current limit. If the low-side sourcing current is exceeded, the high-side MOSFET is not turned on and the low-side MOSFET stays on for the next cycle. The high-side MOSFET is turned on again when the low-side current is below the low-side sourcing current limit at the start of a cycle.

The low-side MOSFET can also sink current from the load. If the low-side sinking current limit is exceeded, the low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario, both MOSFETs are off until the start of the next cycle.

Furthermore, if an output overload condition (as measured by the COMP pin voltage) lasts for more than the hiccup wait time (which is programmed for 0.5 ms, shown in Figure 8-7) the device shuts down itself and restarts after the hiccup time, 14 ms. The hiccup mode helps to reduce the device power dissipation under severe overcurrent condition.

GUID-E96C1616-5376-46A2-BB60-A4ECA7EF2CAE-low.svgFigure 8-7 OCP