ZHCSFI8C June   2016  – June 2021 TPS62135

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Schematic
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Precise Enable
      2. 9.3.2 Power Good (PG)
      3. 9.3.3 Pin-Selectable Output Voltage (VSEL and FB2)
      4. 9.3.4 MODE
      5. 9.3.5 Undervoltage Lockout (UVLO)
      6. 9.3.6 Thermal Shutdown
    4. 9.4 Device Functional Modes
      1. 9.4.1 Pulse Width Modulation (PWM) Operation
      2. 9.4.2 Power Save Mode Operation (PWM/PFM)
      3. 9.4.3 100% Duty-Cycle Operation
      4. 9.4.4 HICCUP Current Limit And Short Circuit Protection (TPS62135 only)
      5. 9.4.5 Current Limit And Short Circuit Protection (TPS621351 only)
      6. 9.4.6 Soft-Start / Tracking (SS/TR)
      7. 9.4.7 Output Discharge Function (TPS62135 only)
      8. 9.4.8 Starting into a Pre-Biased Load (TPS621351 only)
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Programming the Output Voltage
      2. 10.1.2 External Component Selection
      3. 10.1.3 Inductor Selection
      4. 10.1.4 Capacitor Selection
        1. 10.1.4.1 Output Capacitor
        2. 10.1.4.2 Input Capacitor
        3. 10.1.4.3 Soft-Start Capacitor
      5. 10.1.5 Tracking Function
      6. 10.1.6 Output Filter and Loop Stability
    2. 10.2 Typical Applications
      1. 10.2.1 Typical Application with Adjustable Output Voltage
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Typical Application using VSEL and FB2
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 LED Power Supply
      2. 10.3.2 Powering Multiple Loads
      3. 10.3.3 Voltage Tracking
      4. 10.3.4 Precise Soft-Start Timing
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方产品免责声明
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 静电放电警告
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

over operating junction temperature (TJ= -40 °C to +125 °C) and VIN= 3 V to 17 V. Typical values at VIN = 12 V and TA= 25 °C. (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY
IQOperating Quiescent CurrentEN = high, IOUT= 0 mA, Device not switching, TJ= 85 °C35µA
IQOperating Quiescent CurrentEN = high, IOUT= 0 mA, Device not switching1846µA
ISDShutdown CurrentEN = 0 V, Nominal value at TJ= 25 °C, Max value at TJ= 85 °C18µA
VUVLOUndervoltage Lockout ThresholdRising Input Voltage2.82.93.0V
Falling Input Voltage2.52.62.7V
TSDThermal Shutdown TemperatureRising Junction Temperature160°C
Thermal Shutdown Hysteresis20
CONTROL (EN, SS/TR, PG, MODE, VSEL)
VIHHigh Level Input Voltage for VSEL, MODE pin0.9V
VILLow Level Input Voltage for VSEL, MODE pin0.3V
VIHInput Threshold Voltage for EN pin; rising edge0.770.80.83V
VILInput Threshold Voltage for EN pin; falling edge0.670.70.73V
ILKG_ENInput Leakage Current for EN, VSEL, MODEVIH = VIN or VIL= GND100nA
VTH_PGPower Good Threshold Voltage; dc levelRising (%VOUT)93%96%98%
HysteresisFalling (%VOUT)3%4.5%
VOL_PGPower Good Output Low VoltageIPG = 2 mA0.070.3V
ILKG_PGInput Leakage Current (PG)VPG = 5 V100nA
ISS/TRSS/TR pin source current2.5µA
ISS/TR toleranceTJ= -40 °C to +125 °C±0.2µA
Tracking gainVFB / VSS/TR1
Tracking offsetfeedback voltage with VSS/TR = 0 V11mV
POWER SWITCH
RDS(ON)High-Side MOSFET ON-ResistanceVIN ≥ 4 V100180mΩ
Low-Side MOSFET ON-ResistanceVIN ≥ 4 V3967mΩ
ILIMHHigh-Side MOSFET Current Limitdc value(2)4.85.66.5A
ILIMLLow-Side MOSFET Current Limitdc value(2)4.85.66.5A
ILIMNEGNegative current limitdc value1.5A
fSWPWM Switching FrequencyMODE = high; VIN = 12V, VOUT = 3.3V; IOUT = 1A2.5MHz
OUTPUT
VFBFeedback Voltage0.7V
ILKG_FBInput Leakage Current (FB)VFB= 0.7 V170nA
VFBFeedback Voltage Accuracy(1)VIN ≥ VOUT +1 VPWM mode-1%1%
VIN ≥ VOUT +1 V; VOUT ≥ 1.5 VPFM mode; Co,eff ≥ 47 µF, L = 1 µH-1%2%
1 V ≤ VOUT < 1.5 VPFM mode; Co,eff ≥ 47 µF, L = 1 µH-1%2.5%
VOUT < 1 VPFM mode; Co,eff ≥ 75 µF, L = 1 µH-1%2.5%
VFBFeedback Voltage Accuracy with Voltage TrackingVIN ≥ VOUT +1 V; VSS/TR = 0.35 VPWM mode-2%7.5%
RDS(ON)FB2 resistance to GND when VSEL= high1030Ω
ILKG_FB2Input Leakage Current in FB2 when VSEL = low170nA
Load RegulationPWM mode operation0.05%/A
Line RegulationPWM mode operation, IOUT= 1 A, VIN ≥ Vout + 1 V or VIN ≥ 3.5 V whichever is larger0.02%/V
Output Discharge ResistanceTPS62135 only100Ω
tdelayStart-up Delay timeIO= 0 mA, Time from EN=high to start switching; VIN applied already200300µs
trampRamp time; SS/TR pin openIO= 0 mA, Time from first switching pulse until 95% of nominal output voltage; device not in current limit150µs
(1) The output voltage accuracy in Power Save Mode can be improved by increasing the output capacitor value, reducing the output voltage ripple (see Section 9.4.1).
(2) See also Section 9.4.4 and Section 9.4.5.