ZHCSEP0C October   2015  – February 2021 TPS61193

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics (1) (1)
    6. 6.6  Internal LDO Electrical Characteristics
    7. 6.7  Protection Electrical Characteristics
    8. 6.8  Current Sinks Electrical Characteristics
    9. 6.9  PWM Brightness Control Electrical Characteristics
    10. 6.10 Boost and SEPIC Converter Characteristics
    11. 6.11 Logic Interface Characteristics
    12. 6.12 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated DC-DC Converter
      2. 7.3.2 Internal LDO
      3. 7.3.3 LED Current Sinks
        1. 7.3.3.1 Output Configuration
        2. 7.3.3.2 Current Setting
        3. 7.3.3.3 Brightness Control
      4. 7.3.4 Protection and Fault Detections
        1. 7.3.4.1 Adaptive DC-DC Voltage Control and Functionality of LED Fault Comparators
        2. 7.3.4.2 Overview of the Fault/Protection Schemes
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device States
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application for 3 LED Strings
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Inductor Selection
          2. 8.2.1.2.2 Output Capacitor Selection
          3. 8.2.1.2.3 Input Capacitor Selection
          4. 8.2.1.2.4 LDO Output Capacitor
          5. 8.2.1.2.5 Diode
        3. 8.2.1.3 Application Curves
      2. 8.2.2 SEPIC Mode Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Inductor
          2. 8.2.2.2.2 Diode
          3. 8.2.2.2.3 Capacitor C1
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

6.10 Boost and SEPIC Converter Characteristics

TJ = −40°C to +125°C (unless otherwise noted). Unless otherwise specified: VIN = 12 V, VEN/VDDIO = 3.3 V, L = 22 μH, CIN = 2 × 10-μF ceramic and 33-μF electrolytic, COUT = 2 × 10-μF ceramic and 33-μF electrolytic, D = NRVB460MFS, ƒSW = 300 kHz.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VINInput voltage4.540V
VOUTOutput voltage645
ƒSW_MINMinimum switching frequency (central frequency if spread spectrum is enabled)Defined by RFSET resistor300kHz
ƒSW_MAXMaximum switching frequency (central frequency if spread spectrum is enabled)2 200kHz
VOUT/VINConversion ratio10
TOFFMinimum switch OFF time(1)ƒSW ≥ 1.15 MHz55ns
ISW_MAXSW current limit1.822.2A
RDSONFET RDSONPin-to-pin240400mΩ
fSYNCExternal SYNC frequency3002 200kHz
tSYNC_ON_MINExternal SYNC minimum on time(1)150ns
tSYNC_OFF_MINExternal SYNC minimum off time(1)150ns
(1) This specification is not ensured by ATE.