ZHCSFM8A December   2011  – October 2016 TPS53313

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Soft-Start Operation
      2. 7.3.2 Power Good
      3. 7.3.3 UVLO Function
      4. 7.3.4 Overcurrent (OC) Protection
      5. 7.3.5 Overvoltage and Undervoltage Protection
      6. 7.3.6 Overtemperature Protection
      7. 7.3.7 Output Discharge
      8. 7.3.8 Switching Frequency Setting and Synchronization
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation Mode
      2. 7.4.2 Light Load Operation
      3. 7.4.3 Forced Continuous Conduction Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Inductor Selection
        2. 8.2.2.2 Output Capacitor Selection
        3. 8.2.2.3 Input Capacitor Selection
        4. 8.2.2.4 Output Voltage Setting Resistors Selection
        5. 8.2.2.5 Compensation Design
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)(3)
MIN MAX UNIT
Input voltage VIN –0.3 20 V
VBST –0.3 27
VBST to SW –0.3 7
SW (bidirectional) DC –2 20
transient < 20 ns –3 20
EN VVIN ≥ 17 –0.3 17
VVIN < 17 –0.3 VVIN + 0.1
FB, MODE/SS –0.3 3.6
Output voltage COMP, RT/SYNC, BP3 –0.3 3.6 V
BP7 –0.3 7
PGD –0.3 17
Ground pin (GND) –0.3 0.3 V
Output current 6 A
Operating temperature, TJ –40 150 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.
(3) Voltage values are with respect to the corresponding LL terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Input voltage VIN (main supply) 4.5 16 V
VBST –0.1 22
VBST to SW –0.1 6.5
SW (bidirectional) dc –1 18
transient < 20 ns –2 18
EN –0.1 VVIN + 0.1
FB, MODE/SS –0.1 3.5
Output voltage COMP, RT/SYNC, BP3 –0.1 3.5 V
BP7 –0.1 6.5
PGD –0.1 14
Ground pin (GND) –0.1 0.1 V
TA Ambient temperature –40 85 °C
TJ Junction temperature –40 125 °C
(1) Voltage values are with respect to the corresponding LL terminal.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.

6.4 Thermal Information

THERMAL METRIC(1) TPS53313 UNIT
RGE (VQFN)
24 PINS
RθJA Junction-to-ambient thermal resistance 44.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 35 °C/W
RθJB Junction-to-board thermal resistance 19 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 18.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 8.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating free-air temperature range, VVIN = 12 V, PGND = GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT SUPPLY
VVIN VIN supply voltage Nominal input voltage range 4.5 16 V
VPOR VIN POR threshold Ramp up, EN = HIGH 4 4.23 4.4 V
VPOR(hys) VIN POR hysteresis 200 mV
ISTBY Standby current EN = LOW, VIN = 12 V 58 µA
RBOOT Bootstrap on-resistance 10 Ω
REFERENCE
VVREF Internal precision reference voltage 0.6 V
TOLVREF VREF tolerance –1% 1%
ERROR AMPLIFIER
UGBW(1) Unity gain bandwidth 14 MHz
AOL(1) Open loop gain 80 dB
IFBINT FB input leakage current Sourced from FB pin 50 nA
IEA(max) Output sinking and sourcing current 5 mA
SR(1) Slew rate 5 V/µs
ENABLE
RENPD(1) Enable pulldown resistor 800 kΩ
VENH EN logic high VVIN = 4.5 V 1.8 V
VENHYS EN hysteresis VVIN = 4.5 V 0.6 V
IEN EN pin current VEN = 0 V 1 µA
VEN = 3.3 V 3.3 5
VEN = 14 V 17.8 27.5
SOFT-START
tSS_1 Delay after EN asserts EN = High 0.65 ms
tSS_2 Soft start ramp_up time 0 V ≤ VSS ≤ 0.6 V, 39-kΩ or no resistor to MODE/SS pin 1 ms
0 V ≤ VSS ≤ 0.6 V, 20-kΩ or 160-kΩ resistor to MODE/SS pin 3
0 V ≤ VSS ≤ 0.6 V, 10-kΩ or 82-kΩ resistor to MODE/SS pin 6
tPGDENDLY PGD startup delay time VSS = 0.6 V to PGD (SSOK) going high,
tSS = 1 ms		 0.2 ms
RAMP
Ramp amplitude 4.5 V ≤ VVIN ≤ 14.4 V VVIN/9 V
14.4 V ≤ VVIN ≤ 16 V 1.6
PWM
tMIN(off) Minimum OFF time fSW = 1 MHz 150 ns
tMIN(on) Minimum ON time No load 90 ns
DMAX Maximum duty cycle fSW = 1 MHz 80%
SWITCHING FREQUENCY
fSW Switching frequency tolerance fSW = 1 MHz, RT = 45.3 kΩ –10% 10%
SOFT DISCHARGE
RSFTDIS Soft-discharge transistor resistance EN = Low, VIN = 4.5 V, VOUT = 0.6 V 120 Ω
OVERCURRENT AND ZERO CROSSING
IOCPL Overcurrent limit on high-side FET (peak) When IOUT exceeds this threshold for 4 consecutive cycles, 2.2-nF capacitor to MODE/SS pin 4.5 A
When IOUT exceeds this threshold for 4 consecutive cycles, no capacitor to MODE/SS pin 6 A
When IOUT exceeds this threshold for 4 consecutive cycles, 10-nF capacitor to MODE/SS pin 9
IOCPH One time overcurrent shut-off on the low-side FET (peak) Immediately shut down when sensed current reach this value, 2.2-nF capacitor to MODE/SS pin 4.5 A
Immediately shut down when sensed current reach this value, no capacitor to MODE/SS pin 6 A
Immediately shut down when sensed current reach this value, 10-nF capacitor to MODE/SS pin 9
VZXOFF Zero crossing comparator internal offset SW – PGND, SKIP mode –3 mV
POWER GOOD
VPGDL Power good low threshold Measured at the FB pin w/r/t VREF 80% 83% 86%
VPGDH Power good high threshold Measured at the FB pin w/r/t VREF 114% 117% 120%
VPG(hys) Power good hysteresis 2
VIN(min_pg) Minimum Vin voltage for valid PG at startup. Measured at VIN with 1-mA (or 2-mA) sink current on PG pin at startup 1 V
VPG(pd) Power good pull-down voltage Pull down voltage with 4-mA sink current 0.2 0.4 V
IPG(leak) Power good leakage current Hi-Z leakage current, apply 3.3-V in off state 12 16.2 µA
OUTPUT OVERVOLTAGE AND UNDERVOLTAGE PROTECTION
TOVPDLY Overvoltage protection delay time Time from FB out of +17% of VREF to OVP fault 2 µs
TUVPDLY Undervoltage protection delay time Time from FB out of –17% of VREF to UVP fault 10 µs
THERMAL SHUTDOWN
THSD(1) Thermal shutdown Shutdown controller, attempt soft-stop 130 140 150 °C
THSDHYST(1) Thermal shutdown hysteresis Controller restarts after temperature drops 40 °C
(1) Ensured by design. Not production tested.

6.6 Typical Characteristics

TPS53313 g001_dutyratio.png Figure 1. Ensured Minimum Duty Ratio
TPS53313 g003_efficiency_lusas8.png Figure 3. Efficiency, VIN = 5 V
TPS53313 g005_fsw_v_rrt_lusas8.png Figure 5. Switching Frequency
vs Timing Resistance (RT)
TPS53313 g007_pgood_lusas8.png Figure 7. PGOOD Upper Threshold
vs Junction Temperature
TPS53313 g009_pghystlo_lusas8.png Figure 9. PGOOD Lower Hysteresis
vs Junction Temperature
TPS53313 g011_fsw_lusas8.png Figure 11. Switching Frequency vs Junction Temperature
TPS53313 g002_efficiency_lusas8.png Figure 2. Efficiency, VIN = 12 V
TPS53313 g004_efficiency_lusas8,png.png Figure 4. Efficiency, VIN = 14 V
TPS53313 g006_pgood_lusas8.png Figure 6. PGOOD Lower Threshold
vs Junction Temperature
TPS53313 g008_modess_lusas8.png Figure 8. MODE/SS Leakage Current
vs Junction Temperature
TPS53313 g010_pghysthi_lusas8.png Figure 10. PGOOD Upper Hysteresis
vs Junction Temperature