ZHCSQE1 January   2024 TPS4810-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charge Pump and Gate Driver Output (VS, G1PU, G1PD, G2, BST, SRC)
      2. 7.3.2 Capacitive Load Driving Using FET Gate (G1PU, G1PD) Slew Rate Control
      3. 7.3.3 Short-Circuit Protection
        1. 7.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 7.3.3.2 Short-Circuit Protection With Latch-Off
      4. 7.3.4 Undervoltage Protection (UVLO)
      5. 7.3.5 Reverse Polarity Protection
      6. 7.3.6 Short-Circuit Protection Diagnosis (SCP_TEST)
      7. 7.3.7 TPS48100-Q1 as a Simple Gate Driver
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Application Limitations
        1. 8.1.1.1 Short-Circuit Protection Delay
        2. 8.1.1.2 Short-Circuit Protection Threshold
    2. 8.2 Typical Application: Circuit Breaker in Battery Management System (BMS) using Low Side Current Sense
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 接收文档更新通知
    2. 9.2 支持资源
    3. 9.3 Trademarks
    4. 9.4 静电放电警告
    5. 9.5 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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8.3 Power Supply Recommendations

When the external MOSFETs turn-OFF during the conditions such as INP1 control, overcurrent protection causing an interruption of the current flow, the input parasitic line inductance generates a positive voltage spike on the input and output parasitic inductance generates a negative voltage spike on the output. The peak amplitude of voltage spikes (transients) depends on the value of inductance in series to the input or output of the device. These transients can exceed the Absolute Maximum Ratings of the device if steps are not taken to address the issue. Typical methods for addressing transients include:

  • Use of a TVS diode and input capacitor filter combination across input to and GND to absorb the energy and dampen the positive transients.
  • Use of a diode or a TVS diode across the output and GND to absorb negative spikes.

The TPS4810-Q1 gets powered from the VS pin. Voltage at this pin must be maintained above V(VS_PORR) level to specified operation. If the input power supply source is noisy with transients, then TI recommends to place a RVS – CVS filter between the input supply line and VS pin to filter out the supply noise. TI recommends RVS value around 100Ω.

In case where large di/dt is involved, the system and layout parasitic inductances can generate large differential signal voltages between CS+ and CS– pins. This action can trigger false short-circuit protection and nuisance trips in the system. To overcome such scenario, TI suggests to add placeholder for RC filter components across sense resistor (RSNS) and tweak the values during test in the real system. The RC filter components must not be used in current sense designs by MOSFET VDS sensing to avoid impact on the short-circuit protection response.

The following figure shows the circuit implementation with optional protection components.

GUID-20240108-SS0I-GHKL-WVNP-8QLCSTKQ1WMV-low.svgFigure 8-11 Circuit Implementation With Optional Protection Components For TPS4810-Q1