ZHCSDD2A January   2015  – February 2015 TPS24740 , TPS24741 , TPS24742

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Internal Power ORing of TPS24740
      2. 9.3.2  Enable and Over-voltage Protection
      3. 9.3.3  Current Limit and Power Limit During Start-up
      4. 9.3.4  Two Level Protection During Regular Operation
      5. 9.3.5  Dual Timer (TFLT and TINR)
      6. 9.3.6  Using SoftStart - IHGATE and TINR Considerations
      7. 9.3.7  Three Options for Response to a Fast Trip
      8. 9.3.8  Programmable Reverse Voltage Threshold
      9. 9.3.9  Analog Current Monitor
      10. 9.3.10 Power Good Flag
      11. 9.3.11 ORing MOSFET Status Indicator
      12. 9.3.12 Fault Reporting
    4. 9.4 Device Functional Modes
      1. 9.4.1 ORing Functional Modes
      2. 9.4.2 Hot Swap Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 30A Single channel OR then Hot Swap With Current Monitoring
      2. 10.2.2 Design Requirements
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1  Select RSNS and VSNS,CL Setting
        2. 10.2.3.2  Selecting the Fast Trip Threshold and Filtering
        3. 10.2.3.3  Selecting the Hot Swap FET(s)
        4. 10.2.3.4  Select Power Limit
        5. 10.2.3.5  Set Fault Timer
        6. 10.2.3.6  Check MOSFET SOA
        7. 10.2.3.7  Choose ORing MOSFET
        8. 10.2.3.8  Choose Reverse Current Threshold and Filtering
        9. 10.2.3.9  Choose Under Voltage and Over Voltage Settings
        10. 10.2.3.10 Selecting CIN, COUT, and CMIDDLE
        11. 10.2.3.11 Selecting D1 and D2
        12. 10.2.3.12 Ensuring Stability
        13. 10.2.3.13 Compute Tolerances
      4. 10.2.4 Application Curves
      5. 10.2.5 40 A Single Channel Hot Swap then ORing
        1. 10.2.5.1 Design Requirements
        2. 10.2.5.2 Design Procedure
          1. 10.2.5.2.1  Select RSNS and VSNS,CL Setting
          2. 10.2.5.2.2  Selecting the Fast Trip Threshold and Filtering
          3. 10.2.5.2.3  Selecting the Hot Swap FET
          4. 10.2.5.2.4  Select Power Limit
          5. 10.2.5.2.5  Set Fault Timer
          6. 10.2.5.2.6  Check MOSFET SOA
          7. 10.2.5.2.7  Checking Stability of Hot Swap Loop
          8. 10.2.5.2.8  Choose ORing MOSFET
          9. 10.2.5.2.9  Choose Reverse Current Threshold and Filtering
          10. 10.2.5.2.10 Choose Under Voltage and Over Voltage Settings
          11. 10.2.5.2.11 Selecting CIN, COUT, CMIDDLE, and Transient Protection
          12. 10.2.5.2.12 Adding CENHS
        3. 10.2.5.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 TPS2474x in Battery Back Up
      2. 10.3.2 TPS2474x in Priority Muxing
      3. 10.3.3 TPS2474x with Multiple Loads and Multiple Supplies
      4. 10.3.4 Two Supplies Powering a Load
      5. 10.3.5 TPS2474x in Redundant DC/DC Applications
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 相关链接
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 术语表
  14. 14机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

12 Layout

12.1 Layout Guidelines

When doing the layout of the TPS2474x in the ORing then hot swap configuration the following are considered best practice.

  • Ensure proper Kelvin Sense of RSNS
  • Keep the filtering capacitors CFSTP and CRV as close to the IC as possible.
  • Keep the traces from CCP to CP and A as short as possible.
  • Run a separate trace from A and RVSNM to ORing FET source. This will prevent the charge pump noise along with a DC bias (due to supply current draw) from interfering with the reverse current threshold.
  • Run a separate trace from C and from RRV to ORing FET drain.
  • Place a Schottky diode and a ceramic bypass capacitor close to the source of the Hot Swap MOSFET.
  • Place a TVS and a ceramic bypass capacitor between VIN and ground close to the source of the ORing MOSFET.
  • Use a separate trace to connect to VDD and SENM.
  • Note that special care must be taken when placing the bypass capacitor for the VDD pin. During Hot Shorts, there is a very large dv/dt on input voltage during the MOSFET turn off. If the bypass capacitor is placed right next to the pin and the trace from RSNS to the pin is long, an LC filter is formed. As a result a large differential voltage can develop between VDD and SENM if there is a large transient on Vin. This could result in a violation of the abs max rating from VDD to SENM. To avoid this, place the bypass capacitor close to RSNS instead of the VDD pin.
TPS24740 TPS24741 TPS24742 LayoutDonts_slvscv6.gifFigure 75. Layout Don'ts

12.2 Layout Example

TPS24740 TPS24741 TPS24742 Layout_OR_HS_slvscv6.gifFigure 76. Layout Example for ORing then Hot Swap Configuration