ZHCSEN2A November   2015  – February  2016 TPD4E02B04

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  IEC 61000-4-2 ESD Protection
      2. 7.3.2  IEC 61000-4-4 EFT Protection
      3. 7.3.3  IEC 61000-4-5 Surge Protection
      4. 7.3.4  IO Capacitance
      5. 7.3.5  DC Breakdown Voltage
      6. 7.3.6  Ultra Low Leakage Current
      7. 7.3.7  Low ESD Clamping Voltage
      8. 7.3.8  Supports High Speed Interfaces
      9. 7.3.9  Industrial Temperature Range
      10. 7.3.10 Easy Flow-Through Routing Package
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档　
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

The TPD4E02B04 is a diode type TVS which is used to provide a path to ground for dissipating ESD events on high-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

8.2 Typical Application

TPD4E02B04 app_diagram.gif Figure 20. USB 3.1 Gen 2 Type-C ESD Schematic
TPD4E02B04 TPD4E02B04EVM USB Layout.png Figure 21. USB 3.1 Gen 2 SuperSpeed Layout

8.2.1 Design Requirements

For this design example two TPD4E02B04 devices and two TPD4E05U06 devices are being used in a USB 3.1 Gen 2 Type-C application. This will provide a complete ESD protection scheme.

Given the USB 3.1 Gen 2 Type-C application, the parameters listed in Table 1 are known.

Table 1. Design Parameters

DESIGN PARAMETER VALUE
Signal Range on SuperSpeed+ Lines 0 V to 3.6 V
Operating Frequency on SuperSpeed+ Lines 5 GHz
Signal Range on CC, SBU, and DP/DM Lines 0 V to 5 V
Operating Frequency on CC, SBU, and DP/DM Lines up to 480 MHz

8.2.2 Detailed Design Procedure

8.2.2.1 Signal Range

The TPD4E02B04 supports signal ranges between -3.6 V and 3.6 V, which supports the SuperSpeed+ pairs on the USB Type-C application. The TPD4E05U06 supports signal ranges between 0 and 5.5 V, which supports the CC, SBU, and DP/DM lines.

8.2.2.2 Operating Frequency

The TPD4E02B04 has a 0.27 pF (typ) capacitance, which supports the USB3.1 Gen 2 data rates of 10 Gbps. The layout example in Figure 21 is intended to negate some of the loading capacitance of the TPD4E02B04 by narrowing the traces slightly over the device itself. The TPD4E05U06 has a 0.5 pF (typical) capacitance, which easily supports the CC, SBU, and DP/DM data rates.

8.2.3 Application Curves

TPD4E02B04 10gbps_bare_board.png
A.
Figure 22. USB 3.1 Gen 2 10Gbps Eye Diagram (Bare Board)
TPD4E02B04 10gbps_populated.png
A.
Figure 23. USB 3.1 Gen 2 10Gbps Eye Diagram (with TPD4E02B04)