ZHCSF88A May   2016  – July 2016 TPD1E1B04

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-2 ESD Protection
      2. 7.3.2 IEC 61000-4-4 EFT Protection
      3. 7.3.3 IEC 61000-4-5 Surge Protection
      4. 7.3.4 IO Capacitance
      5. 7.3.5 DC Breakdown Voltage
      6. 7.3.6 Low Leakage Current
      7. 7.3.7 Extremely Low ESD Clamping Voltage
      8. 7.3.8 Industrial Temperature Range
      9. 7.3.9 Industry Standard Footprint
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档　
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Electrical fast transient IEC 61000-4-4 (5/50 ns) 80 A
Peak pulse IEC 61000-4-5 Power (tp - 8/20 µs) 50 W
IEC 61000-4-5 Current (tp - 8/20 µs) 6.3 A
TA Operating free-air temperature –40 125 °C
Tstg Storage temperature –65 155 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 ESD Ratings—IEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±30000 V
IEC 61000-4-2 air-gap discharge ±30000

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIO Input pin voltage –3.6 3.6 V
TA Operating free-air temperature –40 125 °C

6.5 Thermal Information

THERMAL METRIC(1) TPD1E1B04 UNIT
DPY (X1SON)
2 PINS
RθJA Junction-to-ambient thermal resistance 420 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 169.3 °C/W
RθJB Junction-to-board thermal resistance 276.1 °C/W
ψJT Junction-to-top characterization parameter 122.1 °C/W
ψJB Junction-to-board characterization parameter 157.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 100 nA –3.6 3.6 V
VBRF Breakdown voltage, any IO pin to GND Measured as the maximum voltage before device snaps back into VHOLD voltage 6.4 V
VBRR Breakdown voltage, GND to any IO pin Measured as the maximum voltage before device snaps back into VHOLD voltage –6.4 V
VHOLD Holding voltage IIO = 1 mA, TA = 25°C 5 6 6.6 V
VCLAMP Clamping voltage IPP = 1 A, TLP, from IO to GND 6.3 V
IPP = 5 A, TLP, from IO to GND 6.8
IPP = 16 A, TLP, from IO to GND 8.5
IPP = 1 A, TLP, from GND to IO 6.3
IPP = 5 A, TLP, from GND to IO 6.8
IPP = 16 A, TLP, from GND to IO 8.5
ILEAK Leakage current, IO to GND VIO = ±2.5 V 0.2 100 nA
RDYN Dynamic resistance IO to GND 0.15 Ω
GND to IO 0.15
CL Line capacitance VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C 1 1.3 pF

6.7 Typical Characteristics

TPD1E1B04 D001_SLVSDL0.gif Figure 1. Positive TLP Curve
TPD1E1B04 D003_SLVSDL0.gif Figure 3. 8-kV IEC Waveform
TPD1E1B04 D005_SLVSDL0.gif Figure 5. Surge Curve (tp = 8/20 µs), Any IO Pin to GND
TPD1E1B04 D007_SLVSDL0.gif Figure 7. Leakage Current vs. Temperature
TPD1E1B04 D009_SLVSDL0.gif Figure 9. Capacitance vs. Frequency
TPD1E1B04 D002_SLVSDL0.gif Figure 2. Negative TLP Curve
TPD1E1B04 D004_SLVSDL0.gif Figure 4. –8-kV IEC Waveform
TPD1E1B04 D006_SLVSDL0.gif Figure 6. Capacitance vs. Bias Voltage
TPD1E1B04 D008_SLVSDL0.gif Figure 8. DC Voltage Sweep I-V Curve
TPD1E1B04 D010_SLVSDL0.gif Figure 10. Insertion Loss