ZHCS149A March   2011  – May 2015 TLV61224

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Controller Circuit
      2. 7.3.2 Start-up
      3. 7.3.3 Operation at Output Overload
      4. 7.3.4 Undervoltage Lockout
      5. 7.3.5 Overvoltage Protection
      6. 7.3.6 Overtemperature Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Enable and Shutdown Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Programming the Output Voltage
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Capacitor Selection
          1. 8.2.2.3.1 Input Capacitor
          2. 8.2.2.3.2 Output Capacitor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage(2) VIN, L, VOUT, EN, FB –0.3 7.5 V
Temperature Operating junction temperature, TJ –40 150 °C
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
Machine model (MM) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VIN Supply voltage at VIN 0.7 3 V
TA Operating free air temperature –40 85 °C
TJ Operating virtual junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TLV61224 UNIT
DCK (SOT)
6 PINS
RθJA Junction-to-ambient thermal resistance 231.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 55.8 °C/W
RθJB Junction-to-board thermal resistance 77.3 °C/W
ψJT Junction-to-top characterization parameter 0.7 °C/W
ψJB Junction-to-board characterization parameter 76.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over recommended free-air temperature range and over recommended input voltage range (typical at an ambient temperature range of 25°C) (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC-DC STAGE
VIN Input voltage range 0.7 3 V
VIN Maximum minimum input voltage for start-up RLoad ≥ 150 Ω, TA = 25°C 0.7 V
VOUT TLV61224 output voltage VIN < VOUT 2.85 3 3.15 V
ILH Inductor current ripple 200 mA
ISW switch current limit VOUT = 3 V, VIN = 1.2 V 160 400 mA
RDSon_HSD Rectifying switch ON-resistance VOUT = 3 V 1000 mΩ
RDSon_LSD Main switch ON-resistance VOUT = 3 V 600 mΩ
Line regulation VIN < VOUT 0.5%
Load regulation VIN < VOUT 0.5%
IQ Quiescent current VIN IO = 0 mA, VEN = VIN = 1.2 V, VOUT = 3 V
 0.5 1 μA
VOUT 5 10
ISD Shutdown current VIN VEN = 0 V, VIN = 1.2 V, VOUT ≥ VIN 0.2 1 μA
ILKG_VOUT Leakage current into VOUT VEN = 0 V, VIN = 1.2 V, VOUT = 3 V 1 μA
ILKG_L Leakage current into L VEN = 0 V, VIN = 1.2 V, VL = 1.2 V, VOUT ≥ VIN 0.01 0.7 μA
IEN EN input current Clamped on GND or VIN (VIN < 1.5 V) 0.005 0.1 μA
CONTROL STAGE
VIL Maximum EN input low voltage VIN ≤ 1.5 V 0.2 × VIN V
VIH Minimum EN input high voltage VIN ≤ 1.5 V 0.8 × VIN V
VIL Maximum EN input low voltage VIN > 1.5 V 0.4 V
VIH Minimum EN input high voltage VIN > 1.5 V 1.2 V
VUVLO Undervoltage lockout threshold for turnoff VIN decreasing 500 mV
Undervoltage lockout hysteresis 50 mV
Overvoltage protection threshold 5.5 7.5 V
Overtemperature protection 140 °C
Overtemperature hysteresis 20 °C

6.6 Typical Characteristics

Table 1. Table of Graphs

FIGURE
Minimum of Maximum Output Current vs Input Voltage Figure 1
Efficiency vs Output Current, VIN = [1.2 V; 2.4 V] Figure 2
vs Input Voltage, IOUT = [100 uA; 1 mA; 10 mA; 50 mA] Figure 3
Input Current vs Input Voltage at No Output Load, Device Enabled Figure 4
Output Voltage vs Output Current, VIN = [1.2 V; 2.4 V] Figure 5
vs Input Voltage, Device Disabled, RLOAD = [1 kΩ; 10 kΩ] Figure 6
TLV61224 mio_lvsAM7.png
Figure 1. Minimum of Maximum Output Current vs Input Voltage
TLV61224 effvi_lvsAM7.png
Figure 3. Efficiency vs Input Voltage
TLV61224 voio_lvsAM7.png
Figure 5. Output Voltage vs Output Current
TLV61224 effio_lvsAM7.png
Figure 2. Efficiency vs Output Current
TLV61224 iinvi_lvsAM7.png
Figure 4. Input Current vs Input Voltage at No Output Load,
Device Enabled
TLV61224 vovi_lvsAM7.png
Figure 6. Output Voltage vs input Voltage, Device Disabled