ZHCSUM3C March   2007  – February 2024 SN65C1167E , SN65C1168E

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Driver Output and Receiver Input ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Driver Section Electrical Characteristics
    6. 5.6 Receiver Section Electrical Characteristics
    7. 5.7 Driver Section Switching Characteristics
    8. 5.8 Receiver Section Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Active High Driver Output Enables
      2. 7.3.2 Active Low Receiver Enables
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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5.2 Driver Output and Receiver Input ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)±15000V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)±1000
IEC 61000-4-2, air-gap discharge±8000
IEC 61000-4-2, contact discharge±8000
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.