SNVS441I January   2007  – November 2016 LP5521

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Charge Pump Electrical Characteristics
    7. 6.7  LED Driver Electrical Characteristics (R, G, B Outputs)
    8. 6.8  Logic Interface Characteristics
    9. 6.9  I2C Timing Requirements (SDA, SCL)
    10. 6.10 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charge Pump Operational Description
        1. 7.3.1.1 Output Resistance
        2. 7.3.1.2 Controlling Charge Pump
        3. 7.3.1.3 LED Forward Voltage Monitoring
      2. 7.3.2 LED Driver Operational Description
      3. 7.3.3 Automatic Power Save
      4. 7.3.4 External Clock Detection
      5. 7.3.5 Logic Interface Operational Description
        1. 7.3.5.1 I/O Levels
        2. 7.3.5.2 GPO/INT Pins
        3. 7.3.5.3 TRIG Pin
        4. 7.3.5.4 ADDR_SEL0,1 Pins
        5. 7.3.5.5 CLK_32K Pin
    4. 7.4 Device Functional Modes
      1. 7.4.1 Modes of Operation
    5. 7.5 Programming
      1. 7.5.1 I2C-Compatible Serial Bus Interface
        1. 7.5.1.1 Interface Bus Overview
        2. 7.5.1.2 Data Transactions
        3. 7.5.1.3 Acknowledge Cycle
        4. 7.5.1.4 Acknowledge After Every Byte Rule
        5. 7.5.1.5 Addressing Transfer Formats
        6. 7.5.1.6 Control Register Write Cycle
        7. 7.5.1.7 Control Register Read Cycle
      2. 7.5.2 LED Controller Operation Modes
        1. 7.5.2.1 Disabled
        2. 7.5.2.2 LOAD Program
        3. 7.5.2.3 RUN Program
          1. 7.5.2.3.1 DIRECT Control
      3. 7.5.3 LED Controller Programming Commands
        1. 7.5.3.1 RAMP/WAIT
        2. 7.5.3.2 Set PWM
        3. 7.5.3.3 Go to Start
        4. 7.5.3.4 Branch
        5. 7.5.3.5 End
        6. 7.5.3.6 Trigger
    6. 7.6 Register Maps
      1. 7.6.1  Enable Register (Enable)
      2. 7.6.2  Operation Mode Register (OP Mode)
      3. 7.6.3  R Channel PWM Control (R_PWM)
      4. 7.6.4  G Channel PWM Control (G_PWM)
      5. 7.6.5  B Channel PWM Control (B_PWM)
      6. 7.6.6  R Channel Current (R_CURRENT)
      7. 7.6.7  G Channel Current (G_CURRENT)
      8. 7.6.8  B Channel Current (B_CURRENT)
      9. 7.6.9  Configuration Control (CONFIG)
      10. 7.6.10 R Channel Program Counter Value (R Channel PC)
      11. 7.6.11 G Channel Program Counter Value (G Channel PC)
      12. 7.6.12 B Channel Program Counter Value (B Channel PC)
      13. 7.6.13 Status/Interrupt Register
      14. 7.6.14 RESET Register
      15. 7.6.15 GPO Register
      16. 7.6.16 Program Memory
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Application with Charge Pump
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Capacitor Selection
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Application Without Charge Pump
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedures
    3. 8.3 Initialization Setup
      1. 8.3.1 Program Load and Execution Example
      2. 8.3.2 Direct PWM Control Example
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)(2)(3)
MIN MAX UNIT
V (VDD , VOUT, R, G, B) –0.3 6 V
Voltage on logic pins –0.3 VDD + 0.3 with 6 V maximum V
Continuous power dissipation(4) Internally Limited
Junction temperature, TJ-MAX 125 °C
Maximum lead temperature (soldering) See(5)
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pins.
(3) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(4) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150°C (typical) and disengages at TJ = 130°C (typical).
(5) For detailed soldering specifications and information, please refer to DSBGA Wafer Level Chip Scale Package (SNVA009) or Leadless Leadframe Package (LLP) (SNOA401).

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)(2)(2)
MIN MAX UNIT
VDD 2.7 5.5 V
Recommended charge pump load current IOUT 0 100 mA
Junction temperature, TJ, –30 125 °C
Ambient temperature, TA(3) –30 85 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pins.
(3) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

6.4 Thermal Information

THERMAL METRIC(1) LP5521 UNIT
YFQ (DSBGA) NJA (WQFN)
20 PINS 24 PINS
RθJA Junction-to-ambient thermal resistance 70.7 38.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.5 27.3 °C/W
RθJB Junction-to-board thermal resistance 12.1 15.4 °C/W
ψJT Junction-to-top characterization parameter 0.2 0.2 °C/W
ψJB Junction-to-board characterization parameter 12.0 15.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a 3.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Unless otherwise noted, specifications apply to the LP5521 Functional Block Diagram with: 2.7 V ≤ VDD ≤ 5.5 V, COUT= CIN = 1 μF, CFLY1 = CFLY2 = 0.47 μF; limits are for TJ = 25°C unless specified in the test conditions.(1)(2)(3)
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IVDD Standby supply current EN = 0 (pin), CHIP_EN = 0 (bit), external 32 kHz clock running or not running 0.2 μA
EN = 0 (pin), CHIP_EN = 0 (bit), external 32-kHz clock running or not running, –30°C < TA < 85°C 2
EN = 1 (pin), CHIP_EN = 0 (bit), external 32-kHz clock not running 1 μA
EN = 1 (pin), CHIP_EN = 0 (bit), external 32-kHz clock running 1.4 μA
Normal mode supply current Charge pump and LED drivers disabled 0.25 mA
Charge pump in 1x mode, no load, LED drivers disabled 0.7 mA
Charge pump in 1.5x mode, no load, LED drivers disabled 1.5 mA
Charge pump in 1x mode, no load, LED drivers enabled 1.2 mA
Powersave mode supply current External 32-kHz clock running 10 μA
Internal oscillator running 0.25 mA
ƒOSC Internal oscillator frequency accuracy –4% 4%
–30°C < TA < 85°C –7% 7%
(1) All voltages are with respect to the potential at the GND pins.
(2) Minimum and Maximum limits are specified by design, test, or statistical analysis.
(3) Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics.

6.6 Charge Pump Electrical Characteristics

Limits are for TJ = 25°C unless specified in the test conditions.(1)
SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT
ROUT Charge pump output resistance Gain = 1.5× 3.5 Ω
Gain = 1× 1 Ω
fSW Switching frequency 1.25 MHz
–30°C < TA < 85°C –7% 7%
IGND Ground current Gain = 1.5× 1.2 mA
Gain = 1× 0.5 mA
tON VOUT turn-on time from charge pump off to 1.5x mode VDD = 3.6 V, CHIP_EN = H
IOUT = 60 mA		 100 μs
VOUT Charge pump output voltage VDD = 3.6 V, no load, Gain = 1.5× 4.55 V
(1) Input, output, and fly capacitors should be of the type X5R or X7R low ESR ceramic capacitor.

6.7 LED Driver Electrical Characteristics (R, G, B Outputs)

Limits are for TJ = 25°C unless specified in the test conditions.
SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT
ILEAKAGE R, G, B pin leakage current 0.1 µA
–30°C < TA < 85°C 1
IMAX Maximum source current Outputs R, G, B 25.5 mA
IOUT Accuracy of output current Output current set to 17.5 mA, VDD = 3.6 V –4% 4%
Output current set to 17.5 mA, VDD = 3.6 V,
–30°C < TA < 85°C		 –5% 5%
IMATCH Matching(1) IOUT = 17.5 mA, VDD = 3.6 V 1% 2%
fLED LED PWM switching frequency PWM_HF = 1
Frequency defined by internal oscillator		 558 Hz
PWM_HF = 0
Frequency defined by 32-kHz clock
(internal or external)		 256 Hz
VSAT Saturation voltage(2) IOUT set to 17.5 mA 50 100 mV
(1) Matching is the maximum difference from the average of the three output's currents.
(2) Saturation voltage is defined as the voltage when the LED current has dropped 10% from the value measured at VOUT – 1 V.

6.8 Logic Interface Characteristics

(V(EN) = 1.65 V...VDD, and limits apply through ambient temperature range –30°C < TA < +85°C, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LOGIC INPUT EN
VIL Input low level 0.5 V
VIH Input high level 1.2 V
II Logic input current –1 1 µA
tDELAY Input delay (1) TJ = 25°C 2 µs
LOGIC INPUT SCL, SDA, TRIG, CLK_32K
VIL Input low level 0.2 × V(EN) V
VIH Input high level 0.8 × V(EN) V
II Input current –1 1 µA
ƒCLK_32K Clock frequency TJ = 25°C 32 kHz
ƒSCL Clock frequency 400 kHz
LOGIC OUTPUT SDA, TRIG, INT
IOUT = 3 mA (pullup current),
TJ = 25°C		 0.3
VOL Output low level IOUT = 3 mA (pull-up current) 0.5 V
IL Output leakage current 1 µA
LOGIC INPUT ADDR_SEL0, ADDR_SEL1
VIL Input low level 0.2 × VDD V
VIH Input high level 0.8 × VDD V
II Input current –1 1 µA
LOGIC OUTPUT GPO, INT (IN GPO STATE)
IOUT = 3 mA, TJ = 25°C 0.3
VOL Output low level IOUT = 3 mA 0.5 V
TJ = 25°C VDD – 0.3
VOH Output high level IOUT = –2 mA VDD – 0.5 V
IL Output leakage current 1 µA
(1) The I2C-compatible host should allow at least 1 ms before sending data to the LP5521 after the rising edge of the enable line.

6.9 I2C Timing Requirements (SDA, SCL)

Limits are for TJ = 25°C(1)
MIN MAX UNIT
ƒSCL Clock frequency 400 kHz
1 Hold time (repeated) START condition 0.6 µs
2 Clock low time 1.3 µs
3 Clock high time 600 ns
4 Setup time for a repeated START condition 600 ns
5 Data hold time 50 ns
6 Data set-up time 100 ns
7 Rise time of SDA and SCL 20+0.1Cb 300 ns
8 Fall time of SDA and SCL 15+0.1Cb 300 ns
9 Set-up time for STOP condition 600 ns
10 Bus-free time between a STOP and a START condition 1.3 µs
Cb Capacitive load for each bus line 10 200 pF
(1) Verified by design.
LP5521 20186298.png Figure 1. I2C Timing Diagram

6.10 Typical Characteristics

Unless otherwise specified: VDD = 3.6 V
LP5521 20186221.png Figure 2. LED Drive Efficiency vs Input Voltage Automatic Gain Change
LP5521 20186223.png Figure 4. LED Current vs Current Register Code
LP5521 20186208.png Figure 6. Charge Pump Efficiency vs Load Current
LP5521 20186210.png Figure 8. Charge Pump Output Voltage vs Load Current
LP5521 20186212.png Figure 10. Charge Pump Automatic Gain Change Hysteresis
LP5521 20186216.png Figure 12. Charge Pump Automatic Gain Change
(LED VF = 3.6 V)
LP5521 20186222.png Figure 3. LED Current vs Output Pin Headroom Voltage
LP5521 20186207.png Figure 5. LED Current vs Supply Voltage
LP5521 20186209.png Figure 7. Charge Pump Efficiency vs Input Voltage 1.5x Mode
LP5521 20186211.png Figure 9. Charge Pump Output Voltage vs Input Voltage
Automatic Gain Change from 1x to 1.5x
LP5521 20186213.png Figure 11. Charge Pump Start-Up in 1.5× Mode: No Load
LP5521 20186217.png Figure 13. Standby Current vs Input Voltage