ZHCSJF9A March   2019  – June 2019 LMG3410R150 , LMG3411R150

ADVANCE INFORMATION for pre-production products; subject to change without notice.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化方框图
      2.      高于 100V/ns 时的开关性能
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Direct-Drive GaN Architecture
      2. 8.3.2 Internal Buck-Boost DC-DC Converter
      3. 8.3.3 Internal Auxiliary LDO
      4. 8.3.4 Fault Detection
        1. 8.3.4.1 Over-current Protection
        2. 8.3.4.2 Over-Temperature Protection and UVLO
      5. 8.3.5 Drive Strength Adjustment
    4. 8.4 Device Functional Modes
      1. 8.4.1 Low-Power Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
      3. 9.2.3 Application Curves
    3. 9.3 Paralleling GaN Devices
    4. 9.4 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Using an Isolated Power Supply
    2. 10.2 Using a Bootstrap Diode
      1. 10.2.1 Diode Selection
      2. 10.2.2 Managing the Bootstrap Voltage
      3. 10.2.3 Reliable Bootstrap Start-up
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Power Loop Inductance
      2. 11.1.2 Signal Ground Connection
      3. 11.1.3 Bypass Capacitors
      4. 11.1.4 Switch-Node Capacitance
      5. 11.1.5 Signal Integrity
      6. 11.1.6 High-Voltage Spacing
      7. 11.1.7 Thermal Recommendations
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 第三方产品免责声明
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

over operating free-air temperature range, 9.5 V < VDD < 18 V, LPM = 5 V, VNEG = -14 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GaN POWER
TRANSISTOR
RDS,ON On-state Resistance TJ = 25°C 150 mΩ
TJ = 125°C 235
VSD Third-quadrant mode source-drain voltage IN = 0 V, ISD = 0.1 A 5 V
IN = 0 V, ISD = 3 A TBD
Coss GaN output capacitance IN = 0 V, VDS = 400 V, fSW = 250 kHz 30 pF
Coss,er Effective output capacitance, energy related IN = 0 V, VDS =0-400 V 40 pF
Coss,tr Effective output capacitance, time related ID = 3 A, IN = 0 V, VDS = 0-400 V 60 pF
Qrr Reverse recovery charge VR = 400 V, ISD = 3 A, dISD/dt = 1 A/ns 0 nC
IDSS Drain leakage current Vds=600V, TJ = 25°C 1 uA
IDSS Drain leakage current Vds=600V, TJ = 125°C 10 uA
DRIVER SUPPLY
IVDD,LPM Quiescent current, ultra-low-power mode VLPM = 0 V, VDD = 12 V 80 95 µA
IVDD,Q Quiescent current (average) Transistor held off 0.5 mA
transistor held on 0.5
IVDD,op Operating current VDD = 12 V, fSW = 500 KHz, RDRV=40 kΩ, 50% duty cycle 9 mA
V+5V 5V LDO output voltage VDD = 12 V 4.7 5.3 V
VNEG Negative Supply 15-mA load current -13.9 V
BUCK BOOST
CONVERTER
IDCDC,PK Peak inductor current IOUT = 15 mA, VIN = 12 V, VOUT = -14 V 250 350 mA
ΔVNEG DC-DC output ripple voltage, pk-pk CNEG = 1 µF, IOUT = 15 mA 200 mV
DRIVER INPUT
VIH Input pin, LPM pin, logic high threshold TBD V
VIL Input pin, LPM pin, low threshold 0.8 V
VHYST Input pin, LPM pin, hysteresis 0.8 V
RIN,L Input pull-down resistance 150 kΩ
RLPM LPM pin pull-down resistance 150 kΩ
UNDERVOLTAGE LOCKOUT
VDD,(ON) VDD turnon threshold Turn-on voltage 9.1 V
VDD,(OFF) VDD turnoff threshold Turn-off voltage 8.5 V
ΔVDD,UVLO UVLO Hysteresis 550 mV
FAULT
Itrip Current Fault Trip Point 20 30 40 A
Ttrip Temperature Trip Point trip point 165 °C
TtripHys Temperature Trip Hysteresis 20 °C