ZHCST56 September   2023 LM74700D-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  8. 7 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 功能方框图
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage
      2. 9.3.2 Charge Pump
      3. 9.3.3 Gate Driver
      4. 9.3.4 Enable
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
        1. 9.4.2.1 Regulated Conduction Mode
        2. 9.4.2.2 Full Conduction Mode
        3. 9.4.2.3 Reverse Current Protection Mode
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Design Considerations
        2. 10.2.2.2 MOSFET Selection
        3. 10.2.2.3 Charge Pump VCAP, Input and Output Capacitance
      3. 10.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications
      4. 10.2.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      5. 10.2.5 Application Curves
      6. 10.2.6 OR-ing Application Configuration
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

9.3.2 Charge Pump

The charge pump supplies the voltage necessary to drive the external N-channel MOSFET. An external charge pump capacitor is placed between VCAP and ANODE pins to provide energy to turn on the external MOSFET. For the charge pump to supply current to the external capacitor the EN pin, voltage must be above the specified input high threshold, V(EN_IH). When enabled the charge pump sources a charging current of 300-µA typical. If EN pins is pulled low, then the charge pump remains disabled. To make sure that the external MOSFET can be driven above the specified threshold voltage, the VCAP to ANODE voltage must be above the under voltage lockout threshold, typically 6.6 V, before the internal gate driver is enabled.

Equation 1. TDRV_EN=75μs+CVCAP×VVCAP_UVLOR300 μA

where

  • CVCAP is the charge pump capacitance connected across ANODE and VCAP pins
  • VVCAP_UVLOR = 6.6 V (typical)

To remove any chatter on the gate drive, approximately 900 mV of hysteresis is added to the VCAP undervoltage lockout. The charge pump remains enabled until the VCAP to ANODE voltage reaches 13 V, typically, at which point the charge pump is disabled decreasing the current draw on the ANODE pin. The charge pump remains disabled until the VCAP to ANODE voltage is below to 12.1 V typically at which point the charge pump is enabled. The voltage between VCAP and ANODE continue to charge and discharge between 12.1 V and 13 V as shown in Figure 9-1. By enabling and disabling the charge pump, the operating quiescent current of the LM74700D-Q1 is reduced. When the charge pump is disabled, it sinks 5-µA typical.

GUID-20230921-SS0I-CWLT-8SLL-ZWHM8VFMVHQP-low.svgFigure 9-1 Charge Pump Operation