ZHCSSM7D May   1998  – November 2023 LM6171

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: ±15 V
    6. 5.6 Electrical Characteristics: ±5 V
    7. 5.7 Typical Characteristics: LM6171A Only
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Circuit Operation
      2. 6.3.2 Slew Rate
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Compensation for Input Capacitance
      2. 7.1.2 Power Supply Bypassing
      3. 7.1.3 Termination
      4. 7.1.4 Driving Capacitive Loads
      5. 7.1.5 Using Probes
      6. 7.1.6 Components Selection and Feedback Resistor
    2. 7.2 Typical Applications
      1. 7.2.1 Fast Instrumentation Amplifier
      2. 7.2.2 Multivibrator
      3. 7.2.3 Pulse Width Modulator
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Power Dissipation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Printed Circuit Boards and High-Speed Op Amps
  9. 8 Device and Documentation Support
    1. 8.1 接收文档更新通知
    2. 8.2 支持资源
    3. 8.3 Trademarks
    4. 8.4 静电放电警告
    5. 8.5 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.1 Power Dissipation

The maximum power allowed to dissipate in a device is defined as:

Equation 2. P D = T J m a x - T A θ J A

where

  • PD is the power dissipation in a device
  • TJ(max) is the maximum junction temperature
  • TA is the ambient temperature
  • θJA is the thermal resistance of a particular package

For example, for the LM6171 in a SOIC-8 package, the maximum power dissipation at 25°C ambient temperature is 730 mW.

Thermal resistance, θJA, depends on parameters such as die size, package size, and package material. The smaller the die size and package, the higher θJA becomes. The 8-pin PDIP package has a lower thermal resistance (108°C/W) than the 8-pin SOIC-8 (172°C/W). Therefore, for higher dissipation capability, use an 8-pin PDIP package.

The total power dissipated in a device can be calculated as:

Equation 3. P D = P Q + P L

where

  • PQ = the quiescent power dissipated in a device with no load connected at the output.
    • PQ = supply current × total supply voltage with no load
  • PL = the power dissipated in the device with a load connected at the output; PL is not the power dissipated by the load.
    • PL = output current × (voltage difference between supply voltage and output voltage of the same supply)

For example, the total power dissipated by the LM6171 with VS = ±15 V, and the output voltage of 10 V into a 1‑kΩ load resistor (one end tied to ground) is:

P D = P Q + P L             = 2.5   m A × 30   V + 10   m A × 15   V - 10   V             =   75   m W + 50   m W             = 125   m A