ZHCSHP1A February   2018  – April  2018 ESD204

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings -JEDEC Specifications
    3. 6.3 ESD Ratings - IEC Specifications
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.6 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 10 nA, across operating temperature range -3.6 3.6 V
VBRF Positive Breakdown Voltage, Each IO Pin to GND (1) IIO = 1 mA 5 7.9 V
VBRR Negative Breakdown Voltage, Each IO Pin to GND (1) IIO = -1 mA, -7.9 -5 V
VHOLD Positive Holding Voltage, Each IO pin to GND  (2) IIO = 1 mA 6.2 V
VHOLD-NEG Negative Holding Voltage, Each IO  pin to GND (2) IIO = -1 mA -6.2 V
VCLAMP Clamping voltage Surge IPP = 5.5 A, Each IO pin to GND, GND to Each IO pin, tp=8/20 μs 8.5 V
TLP IPP = 5 A,  Each IO pin to GND, GND to Each IO pin, tp=10/100 ns 8.2 V
TLP IPP = 16 A, Each IO pin to GND, GND to Each IO pin, tp=10/100 ns 11.5 V
RDYN Dynamic resistance Each IO Pin to GND, TLP tp=10/100 ns  0.3 Ω
GND to Each IO Pin, TLP tp=10/100 ns 0.3
CLINE Line capacitance, any IO to GND VIO = 0 V, Vp-p = 30 mV, f = 1 MHz 0.55 0.65 pF
ΔCLINE Variation of line capacitance CLINE1 - CLINE2, VIO = 0 V, Vp-p = 30 mV, f = 1 MHz 0.02 0.07 pF
CCROSS Line-to-line capacitance VIO = 0 V, Vrms = 30 mV, f = 1 MHz 0.25 0.35 pF
(1) VBRF and VBRR are defined as the voltage obtained at 1 mA when sweeping the voltage up, before the device latches into the snapback state
(2) VHOLD is defined as the voltage when 1 mA is applied, after the device has successfully latched into the snapback state.