ZHCS091D February   2011  – March 2021 DRV8801-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supervisor
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 MODE 1
        2. 7.3.2.2 MODE 2
      3. 7.3.3 Fast Decay with Synchronous Rectification
      4. 7.3.4 Slow Decay with Synchronous Rectification (Brake Mode)
      5. 7.3.5 Charge Pump
      6. 7.3.6 SENSE
      7. 7.3.7 VPROPI
        1. 7.3.7.1 Connecting VPROPI Output to ADC
      8. 7.3.8 Protection Circuits
        1. 7.3.8.1 VBB Undervoltage Lockout (UVLO)
        2. 7.3.8.2 Overcurrent Protection (OCP)
        3. 7.3.8.3 Overtemperature Warning (OTW)
        4. 7.3.8.4 Overtemperature Shutdown (OTS)
      9. 7.3.9 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Power Dissipation
        3. 8.2.2.3 Thermal Considerations
          1. 8.2.2.3.1 Junction-to-Ambiant Thermal Impedance (ƟJA)
        4. 8.2.2.4 Motor Current Trip Point
        5. 8.2.2.5 Sense Resistor Selection
        6. 8.2.2.6 Drive Current
      3. 8.2.3 Pulse-Width Modulating
        1. 8.2.3.1 Pulse-Width Modulating ENABLE
        2. 8.2.3.2 Pulse-Width Modulating PHASE
      4. 8.2.4 Application Curves
    3. 8.3 Parallel Configuration
      1. 8.3.1 Parallel Connections
      2. 8.3.2 Non – Parallel Connections
      3. 8.3.3 Wiring nFAULT as Wired OR
      4. 8.3.4 Electrical Considerations
        1. 8.3.4.1 Device Spacing
        2. 8.3.4.2 Recirculation Current Handling
        3. 8.3.4.3 Sense Resistor Selection
        4. 8.3.4.4 Maximum System Current
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

over recommended operating conditions (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWER SUPPLIES (VBB)
VBBVBB operating voltage838V
IVBBVBB operating supply currentfPWM < 50 kHz6mA
Charge pump on, outputs disabled3.2
IVBBQVBB sleep-mode supply currentnSLEEP = 0, TJ = 25°C10μA
CONTROL INPUTS (PHASE, ENABLE, MODE1, MODE2, nSLEEP)
VILInput logic low voltagePHASE, ENABLE,
MODE1, MODE2
0.8V
VIHInput logic high voltage2
VIHYSInput hysteresis100500800mV
IILInput logic low currentPHASE, MODE1, MODE2VIN = 0.8 V–20< –220µA
IIHInput logic high currentVIN = 2.0 V< 120
IILInput logic low currentENABLEVIN = 0.8 V1640μA
IIHInput logic high currentVIN = 2.0 V40100
VILInput logic low voltagenSLEEP0.8V
VIHInput logic high voltage2.7V
IILInput logic low currentVIN = 0.8 V<110μA
IIHInput logic high currentVIN = 2.7 V2750
CONTROL OUTPUTS (nFAULT)
VOLOutput logic low voltageIO = 1 mA0.4V
VBBNFRVBB nFAULT release8 V < VBB < 40 V1213.8V
DMOS DRIVERS (OUT+, OUT-, SENSE, VPROPI)
RDS(on)Output ON resistanceSource driver, IOUT = –2.8 A, TJ = 25°C0.48
Source driver, IOUT = –2.8 A, TJ = 125°C0.740.85
Sink driver, IOUT = 2.8 A, TJ = 25°C0.35
Sink driver, IOUT = 2.8 A, TJ = 125°C0.520.7
VTRIPSENSE trip voltageRSENSE between SENSE and GND500mV
VfBody diode forward voltageSource diode, If = –2.8 A1.4V
Sink diode, If = 2.8 A1.4
AVDADifferential AMP gainSENSE = 0.1 V to 0.4 V5V/V
PROTECTION CIRCUITRY
VUVUVLO thresholdVBB increasing6.57.5V
IOCPOvercurrent protection trip levelVBB = 8.0 approximately 38 V3A
TOTWThermal warning temperature Die temperature Tj(1)160°C
TOTW HYSThermal warning hysteresisDie temperature Tj15°C
TOTSThermal shutdown temperatureDie temperature Tj(2)175°C
TOTS HYSThermal shutdown hysteresisDie temperature Tj15°C
Once the device reaches the thermal warning temperature of 160°C, the device remains in thermal warning until the device cools to 145°C. This is known as the thermal-warning hysteresis of the device.
Once the device reaches the thermal shutdown temperature of 175°C, the device remains in thermal shutdown until the device cools to 160°C. This is known as the thermal-shutdown hysteresis of the device.