ZHCSUL8 December   2023 DRV8334

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1. 5.1 Pin Functions 48-Pin DRV8334
  7. 6 Specification
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings DRV8334
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information DRV8334
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 SPI Timing Diagrams
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Three BLDC Gate Drivers
        1. 7.3.1.1 PWM Control Modes
          1. 7.3.1.1.1 6x PWM Mode
          2. 7.3.1.1.2 3x PWM Mode with INLx enable control
          3. 7.3.1.1.3 3x PWM Mode with SPI enable control
          4. 7.3.1.1.4 1x PWM Mode
          5. 7.3.1.1.5 SPI Gate Drive Mode
        2. 7.3.1.2 Gate Drive Architecture
          1. 7.3.1.2.1 Bootstrap diode
          2. 7.3.1.2.2 GVDD Charge pump
          3. 7.3.1.2.3 VCP Trickle Charge pump
          4. 7.3.1.2.4 Gate Driver Output
          5. 7.3.1.2.5 Passive and Semi-active pull-down resistor
          6. 7.3.1.2.6 TDRIVE Gate Drive Timing Control
          7. 7.3.1.2.7 Propagation Delay
          8. 7.3.1.2.8 Deadtime and Cross-Conduction Prevention
      2. 7.3.2 Low-Side Current Sense Amplifiers
        1. 7.3.2.1 Unidirectional Current Sense Operation
        2. 7.3.2.2 Bidirectional Current Sense Operation
      3. 7.3.3 Gate Driver Shutdown
        1. 7.3.3.1 DRVOFF Gate Driver Shutdown
        2. 7.3.3.2 Gate Driver Shutdown Timing Sequence
      4. 7.3.4 Gate Driver Protective Circuits
        1. 7.3.4.1  PVDD Supply Undervoltage Lockout (PVDD_UV)
        2. 7.3.4.2  GVDD Undervoltage Lockout (GVDD_UV)
        3. 7.3.4.3  BST Undervoltage Lockout (BST_UV)
        4. 7.3.4.4  MOSFET VDS Overcurrent Protection (VDS_OCP)
        5. 7.3.4.5  VSENSE Overcurrent Protection (SEN_OCP)
        6. 7.3.4.6  Phase Comparators
        7. 7.3.4.7  Thermal Shutdown (OTSD)
        8. 7.3.4.8  Thermal Warning (OTW)
        9. 7.3.4.9  OTP CRC
        10. 7.3.4.10 SPI Watchdog Timer
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gate Driver Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
      2. 7.4.2 Device Power Up Sequence
    5. 7.5 Programming
      1. 7.5.1 SPI
      2. 7.5.2 SPI Format
      3. 7.5.3 SPI Format Diagrams
    6. 7.6 Register Maps
      1. 7.6.1 STATUS Registers
      2. 7.6.2 CONTROL Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Typical Application with 48-pin package
        1. 8.2.1.1 External Components
      2. 8.2.2 Application Curves
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Option Addendum
    2. 11.2 Tape and Reel Information

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7.3.2 Low-Side Current Sense Amplifiers

The DRV8334 devices integrate high-performance low-side current sense amplifier for current measurements using low-side shunt resistors. Low-side current measurements are commonly used to implement overcurrent protection, external torque control, or brushless DC commutation with the external controller. The current sense amplifiers feature nine configurable gain settings between 5 and 40 V/V, which can be configured through SPI commands. The CSA output is referenced to the external voltage reference pin (VREF). The CSA output offset can be configured between 1/2 xVREF or 1/8 xVREF to support bidirectional or unidirectional current sensing as needed.

Note: By default, CSA output is disabled. CSA output can be enabled in SPI register IC_CTRL2.

GUID-20220818-SS0I-RF2L-MN98-M7PRF8FKMM7W-low.svg Figure 7-9 Current-Sense Amplifier Diagram