ZHCSD83B February   2015  – May 2019 CSD87501L

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     俯视图
    2.     配置
      1.      Device Images
        1.       RS1S2(on) 与 VGS 间的关系
        2.       栅极电荷
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 封装尺寸
    2. 7.2 推荐的 PCB 布局
    3. 7.3 推荐的模板布局

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJG|10
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVS1S2 Source-to-source voltage VGS = 0 V, IS = 250 μA 30 V
IS1S2 Source-to-source leakage current VGS = 0 V, VS1S2 = 24 V 1 μA
IGSS Gate-to-source leakage current VS1S2 = 0 V, VGS = 20 V 10 µA
VGS(th) Gate-to-source threshold voltage VS1S2 = VGS, IS = 250 μA 1.3 1.8 2.3 V
RS1S2(on) Source-to-source on-resistance VGS = 4.5 V, IS = 7 A 9.3 11.0 mΩ
VGS = 10 V, IS = 7 A 6.6 7.8
gfs Transconductance VS1S2 = 3 V, IS = 7 A 48 S
DYNAMIC CHARACTERISTICS(1)
Ciss Input capacitance VGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz 1620 2110 pF
Coss Output capacitance 189 246 pF
Crss Reverse transfer capacitance 152 198 pF
RG Series gate resistance 300 450 Ω
Qg Gate charge total (4.5 V) VS1S2 = 15 V, IS = 7 A 15 20 nC
Qg Gate charge total (10 V) 31 40 nC
Qgd Gate charge gate-to-drain 6.0 nC
Qgs Gate charge gate-to-source 5.0 nC
Qg(th) Gate charge at Vth 2.5 nC
Qoss Output charge VS1S2 = 15 V, VGS = 0 V 7.6 nC
td(on) Turn on delay time VS1S2 = 15 V, VGS = 10 V,
IS1S2 = 7 A, RG = 0 Ω		 164 ns
tr Rise time 260 ns
td(off) Turn off delay time 709 ns
tf Fall time 712 ns
(1) Dynamic characteristics values specified are per single FET.