ZHCSD72C 数据表 | 德州仪器 TI.com.cn

ZHCSD72C November 2014 – November 2023 CSD83325L

PRODUCTION DATA

4.3 Typical MOSFET Characteristics

T_A = 25°C (unless otherwise stated)

Figure 4-1 Transient Thermal Impedance

Figure 4-2 Saturation Characteristics

V_S1S2 = 5 V

Figure 4-3 Transfer Characteristics

I_S = 5 A

V_S1S2 = 6 V

Figure 4-4 Gate Charge

I_S = 250 µA

Figure 4-6 Threshold Voltage vs Temperature

I_S = 5 A

Figure 4-8 Normalized On-State Resistance vs Temperature

Single pulse, max R_θJA = 150°C/W

Figure 4-10 Maximum Safe Operating Area

Figure 4-5 Capacitance

Figure 4-7 On-State Source-to-Source Resistance vs Gate-to-Source Voltage

Figure 4-9 Typical Diode Forward Voltage

Figure 4-11 Maximum Source Current vs Temperature