ZHCSD72C November   2014  – November 2023 CSD83325L

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 第三方产品免责声明
    2. 5.2 接收文档更新通知
    3. 5.3 支持资源
    4. 5.4 Trademarks
    5. 5.5 静电放电警告
    6. 5.6 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Revision History

Changes from Revision B (February 2017) to Revision C (November 2023)

  • 将阈值电压 GS(th) 从 0.95V 更新为 1.0VGo
  • 更新了整个文档中的表格、图和交叉参考的编号格式Go
  • Updated Source-to-source on resistance VGS = 2.5 V from 14 mΩ to 12 mΩGo
  • Updated Gate-to-source threshold voltage from 0.75 V min, 0.95 V typ, 1.25 V max to 0.7 V min, 1.0 V typ, 1.4 V maxGo

Changes from Revision A (January 2016) to Revision B (February 2017)

  • Added Diode Characteristics (VF(S-S)) in the Electrical Characteristics tableGo
  • Added Figure 4-9 to Typical MOSFET Characteristics sectionGo

Changes from Revision * (November 2014) to Revision A (January 2016)

  • Improved graph setup for readabilityGo