ZHCSGW6B October 2017 – October 2021 CSD25501F3
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = –250 μA | –20 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –16 V | –50 | nA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = –6 V | –50 | nA | |||
| VDS = 0 V, VGS = –16 V | –1 | mA | |||||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = –250 μA | –0.45 | –0.75 | –1.05 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = –1.8 V, IDS = –0.1 A | 120 | 260 | mΩ | ||
| VGS = –2.5 V, IDS = –0.4 A | 86 | 125 | |||||
| VGS = –4.5 V, IDS = –0.4 A | 64 | 76 | |||||
| gfs | Transconductance | VDS = –2 V, IDS = –0.4 A | 3.4 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = –10 V, ƒ = 100 kHz | 295 | 385 | pF | ||
| Coss | Output capacitance | 70 | 91 | pF | |||
| Crss | Reverse transfer capacitance | 4.1 | 5.3 | pF | |||
| RG | Series gate resistance | 33 | Ω | ||||
| RC | Series clamp resistance | 10,000 | Ω | ||||
| Qg | Gate charge total (–4.5 V) | VDS = –10 V, IDS = –0.4 A | 1.02 | 1.33 | nC | ||
| Qgd | Gate charge gate-to-drain | 0.09 | nC | ||||
| Qgs | Gate charge gate-to-source | 0.45 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.36 | nC | ||||
| Qoss | Output charge | VDS = –10 V, VGS = 0 V | 1.8 | nC | |||
| td(on) | Turnon delay time | VDS = –10 V, VGS = –4.5 V, IDS = –0.4 A, RG = 0 Ω | 474 | ns | |||
| tr | Rise time | 428 | ns | ||||
| td(off) | Turnoff delay time | 1154 | ns | ||||
| tf | Fall time | 945 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = –0.4 A, VGS = 0 V | –0.73 | –0.95 | V | ||
| Qrr | Reverse recovery charge | VDS = –10 V, IF = –0.4 A, di/dt = 200 A/μs | 3.0 | nC | |||
| trr | Reverse recovery time | 7.4 | ns | ||||