ZHCS764B February   2012  – September 2022 CSD25211W1015

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Electrical Characteristics
  6. 6 Thermal Characteristics
  7. 7 Typical MOSFET Characteristics
  8. 8 Mechanical Data
    1. 8.1 CSD25211W1015 Package Dimensions
    2. 8.2 Land Pattern Recommendation
  9. 9 静电放电警告
  10. 10Device and Documentation Support
    1. 10.1 第三方产品免责声明
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YZC|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Static Characteristics
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = –250 μA –20 V
BVGSS Gate-to-Source Voltage VDS = 0 V, IG = –250 μA –6.1 –7.2 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –16 V –1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –6 V –100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = –250 μA –0.5 –0.8 –1.1 V
RDS(on) Drain-to-Source On Resistance VGS = –2.5 V, ID = –1.5 A 36 44 mΩ
VGS = –4.5 V, ID = –1.5 A 27 33 mΩ
gfs Transconductance VDS = –10 V, ID = –1.5 A 12 S
Dynamic Characteristics
CISS Input Capacitance VGS = 0 V, VDS = –10 V, ƒ = 1 MHz 475 570 pF
COSS Output Capacitance 234 281 pF
CRSS Reverse Transfer Capacitance 10.5 13.1 pF
Qg Gate Charge Total (–4.5 V) VDS = –10 V, ID = –1.5 A 3.4 4.1 nC
Qgd Gate Charge Gate to Drain 0.2 nC
Qgs Gate Charge Gate to Source 1.1 nC
Qg(th) Gate Charge at Vth 0.6 nC
QOSS Output Charge VDS = –10 V, VGS = 0 V 3.8 nC
td(on) Turn On Delay Time VDS = –10 V, VGS = –4.5 V, ID = –1.5 A
RG = 4 Ω		 13.6 ns
tr Rise Time 8.8 ns
td(off) Turn Off Delay Time 36.9 ns
tf Fall Time 14.2 ns
Diode Characteristics
VSD Diode Forward Voltage IS = –1.5 A, VGS = 0 V –0.8 –1 V
Qrr Reverse Recovery Charge Vdd= –10 V, IF = –1.5 A, di/dt = 200 A/μs 6.9 nC
trr Reverse Recovery Time 11.6 ns