ZHCSCO2E May   2014  – January 2022 CSD23382F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD23382F4 Embossed Carrier Tape Dimensions

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

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Figure 5-1 Transient Thermal Impedance
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Figure 5-2 Saturation Characteristics
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VDS = –5 V
Figure 5-3 Transfer Characteristics
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ID = –0.5 AVDS = 6 V
Figure 5-4 Gate Charge
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ID = –250 µA
Figure 5-6 Threshold Voltage vs Temperature
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VGS = –4.5 VID = –0.5 A
Figure 5-8 Normalized On-State Resistance vs Temperature
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Single PulseTyp RθJA = 245°C/W
Figure 5-10 Maximum Safe Operating Area
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Figure 5-5 Capacitance
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Figure 5-7 On-State Resistance vs Gate-to-Source Voltage
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Figure 5-9 Typical Diode Forward Voltage
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Figure 5-11 Maximum Drain Current vs Temperature