ZHCSAE1D October   2012  – June 2015 CSD18534Q5A

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
    1.     顶视图
      1.      Device Images
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 社区资源
    2. 6.2 商标
    3. 6.3 静电放电警告
    4. 6.4 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q5A 封装尺寸
    2. 7.2 建议印刷电路板 (PCB) 布局
    3. 7.3 建议模板开口
    4. 7.4 Q5A 卷带信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQJ|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.9 2.3 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 14 A 9.9 12.4 mΩ
VGS = 10 V, ID = 14 A 7.8 9.8 mΩ
gfs Transconductance VDS = 30 V, ID = 14 A 72 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 1360 1770 pF
Coss Output capacitance 167 217 pF
Crss Reverse transfer capacitance 5 6.5 pF
RG Series gate resistance 1.5 3 Ω
Qg Gate charge total (4.5 V) VDS = 30 V, ID = 14 A 8.5 11.1 nC
Qg Gate charge total (10 V) 17 22
Qgd Gate charge gate-to-drain 3.5 nC
Qgs Gate charge gate-to-source 3.2 nC
Qg(th) Gate charge at Vth 2.6 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 19 nC
td(on) Turn on delay time VDS = 30 V, VGS = 10 V, IDS = 14 A, RG = 0 Ω 5.2 ns
tr Rise time 5.5 ns
td(off) Turn off delay time 15 ns
tf Fall time 2 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 14 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDS= 30 V, IF = 14 A, di/dt = 300 A/μs 54 nC
trr Reverse recovery time 40 ns