STATIC CHARACTERISTICS |
BVDSS
|
Drain-to-source voltage |
VGS = 0 V, ID = 250 μA |
60 |
|
|
V |
IDSS
|
Drain-to-source leakage current |
VGS = 0 V, VDS = 48 V |
|
|
1 |
μA |
IGSS
|
Gate-to-source leakage current |
VDS = 0 V, VGS = 20 V |
|
|
100 |
nA |
VGS(th)
|
Gate-to-source threshold voltage |
VDS = VGS, ID = 250 μA |
1.5 |
1.8 |
2.3 |
V |
RDS(on)
|
Drain-to-source on-resistance |
VGS = 4.5 V, ID = 22 A |
|
4.4 |
5.8 |
mΩ |
VGS = 10 V, ID = 22 A |
|
3.5 |
4.6 |
gfs
|
Transconductance |
VDS = 30 V, ID = 22 A
|
|
128 |
|
S |
DYNAMIC CHARACTERISTICS |
Ciss
|
Input capacitance |
VGS = 0 V, VDS = 30 V, ƒ = 1 MHz |
|
3200 |
3840 |
pF |
Coss
|
Output capacitance |
|
380 |
456 |
pF |
Crss
|
Reverse transfer capacitance |
|
11 |
14 |
pF |
RG
|
Series gate resistance |
|
|
1.2 |
2.4 |
Ω |
Qg
|
Gate charge total (4.5 V) |
VDS = 30 V, ID = 22 A |
|
18 |
22 |
nC |
Qg
|
Gate charge total (10 V) |
|
36 |
43 |
nC |
Qgd
|
Gate charge gate-to-drain |
|
5.9 |
|
nC |
Qgs
|
Gate charge gate-to-source |
|
6.9 |
|
nC |
Qg(th)
|
Gate charge at Vth
|
|
5.2 |
|
nC |
Qoss
|
Output charge |
VDS = 30 V, VGS = 0 V |
|
32 |
|
nC |
td(on)
|
Turnon delay time |
VDS = 30 V, VGS = 10 V,
IDS = 22 A, RG = 0 Ω
|
|
4.4 |
|
ns |
tr
|
Rise time |
|
7.8 |
|
ns |
td(off)
|
Turnoff delay time |
|
20 |
|
ns |
tf
|
Fall time |
|
2.7 |
|
ns |
DIODE CHARACTERISTICS |
VSD
|
Diode forward voltage |
ISD = 22 A, VGS = 0 V |
|
0.8 |
1 |
V |
Qrr
|
Reverse recovery charge |
VDS= 30 V, IF = 22 A,
di/dt = 300 A/μs |
|
100 |
|
nC |
trr
|
Reverse recovery time |
|
40 |
|
ns |