ZHCSPR7 数据表 | 德州仪器 TI.com.cn

ZHCSPR7E November 1998 – October 2022 CD54HC374 , CD54HC574 , CD54HCT374 , CD54HCT574 , CD74HC374 , CD74HC574 , CD74HCT374 , CD74HCT574

PRODUCTION DATA

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

N|20
PW|20
DW|20

散热焊盘机械数据 (封装 | 引脚)

PW|20
- QFND419A

订购信息

5.4 Electrical Characteristics

PARAMETER		TEST CONDITIONS^⁽²⁾	V_CC (V)	25℃			–40℃ to 85℃		–55℃ to 125℃		UNIT
PARAMETER		TEST CONDITIONS^⁽²⁾	V_CC (V)	MIN	TYP	MAX	MIN	MAX	MIN	MAX	UNIT
HC TYPES
V_IH	High level input voltage		2	1.5			1.5		1.5		V
			4.5	3.15			3.15		3.15
			6	4.2			4.2		4.2
V_IL	Low level input voltage		2			0.5		0.5		0.5	V
			4.5			1.35		1.35		1.35
			6			1.8		1.8		1.8
V_OH	High level output voltage CMOS loads	I_OH = – 20 μA	2	1.9			1.9		1.9		V
		I_OH = – 20 μA	4.5	4.4			4.4		4.4
		I_OH = – 20 μA	6	5.9			5.9		5.9
	High level output voltage TTL loads	I_OH = – 6 mA	4.5	3.98			3.84		3.7		V
	High level output voltage TTL loads	I_OH = –7.8 mA	6	5.48			5.34		5.2		V
V_OL	Low level output voltage CMOS loads	I_OL = 20 μA	2			0.1		0.1		0.1	V
		I_OL = 20 μA	4.5			0.1		0.1		0.1
		I_OL = 20 μA	6			0.1		0.1		0.1
	Low level output voltage TTL loads	I_OL = 6 mA	4.5			0.26		0.33		0.4	V
	Low level output voltage TTL loads	I_OL = 7.8 mA	6			0.26		0.33		0.4	V
I_I	Input leakage current	V_I = V_CC or GND	6			±0.1		±1		±1	μA
I_CC	Quiescent device current	V_I = V_CC or GND	6			8		80		160	μA
V_IL or V_IH	Three-state leakage current	V_O = V_CCor GND	6			±0.5		±5.0		±10	μA
HCT TYPES
V_IH	High level input voltage		4.5 to 5.5	2			2		2		V
V_IL	Low level input voltage		4.5 to 5.5			0.8		0.8		0.8	V
V_OH	High level output voltage CMOS loads	I_OH = – 20 μA	4.5	4.4			4.4		4.4		V
V_OH	High level output voltage TTL loads	I_OH = – 6 mA	4.5	3.98			3.84		3.7		V
V_OL	Low level output voltage CMOS loads	I_OL = 20 μA	4.5			0.1		0.1		0.1	V
V_OL	Low level output voltage TTL loads	I_OL = 6 mA	4.5			0.26		0.33		0.4	V
I_I	Input leakage current	V_I = V_CC or GND	5.5			±0.1		±1		±1	μA
I_CC	Quiescent device current	V_I = V_CC or GND	5.5			8		80		160	μA
V_IL or V_IH	Three-state leakage current	V_O = V_CCor GND	6			±0.5		±5.0		±10	μA
ΔI_CC⁽¹⁾	HCT374 Additional quiescent device current per input pin	D0 - D7 inputs held at V_CC – 2.1	4.5 to 5.5		100	108		135		147	μA
		CP input held at V_CC – 2.1	4.5 to 5.5		100	324		405		441	μA
		OE input held at V_CC – 2.1	4.5 to 5.5		100	468		585		637	μA
	HCT574 Additional quiescent device current per input pin	D0 - D7 inputs held at V_CC – 2.1	4.5 to 5.5		100	144		180		196	μA
		CP input held at V_CC – 2.1	4.5 to 5.5		100	270		337.5		367.5	μA
		OE input held at V_CC – 2.1	4.5 to 5.5		100	216		270		294	μA

(1) For dual-supply systems, theoretical worst case (V_I = 2.4 V, V_CC = 5.5 V) specificationis 1.8mA.

(2) V_I = V_IH or V_IL, unless otherwise noted.