ZHCSH01B
October 2017 – November 2018
PRODUCTION DATA.
1
特性
2
应用
3
说明
典型应用电路
4
修订历史记录
5
(说明 (续))
6
Device Comparison Table
7
Pin Configuration and Functions
Pin Functions
8
Specifications
8.1
Absolute Maximum Ratings
8.2
ESD Ratings
8.3
Recommended Operating Conditions
8.4
Thermal Information
8.5
Electrical Characteristics
8.6
Typical Characteristics
9
Detailed Description
9.1
Overview
9.2
Functional Block Diagram
9.3
Feature Description
9.3.1
Undervoltage Lockout (UVLO)
9.3.2
Power On
9.3.3
Overvoltage Protection (OVP)
9.3.4
Dynamic Power-path Management
9.3.4.1
Input Source Connected (Adapter or USB)
9.3.4.1.1
Input DPM Mode (VIN-DPM)
9.3.4.1.2
DPPM Mode
9.3.4.1.3
Battery Supplement Mode
9.3.4.2
Input Source Not Connected
9.3.5
Battery Charging
9.3.5.1
Charge Current Translator
9.3.5.2
Battery Detection And Recharge
9.3.5.3
Battery Disconnect (SYSOFF Input)
9.3.5.4
Dynamic Charge Timers (TMR Input)
9.3.5.5
Status Indicators (PGOOD, CHG)
9.3.5.6
Thermal Regulation And Thermal Shutdown
9.3.6
Battery Pack Temperature Monitoring
9.3.7
Half-Wave Adaptors
9.4
Device Functional Modes
9.4.1
Sleep Mode
10
Application and Implementation
10.1
Application Information
10.2
Typical Application – bq24079QW-Q1 Charger Design Example
10.2.1
Design Requirements
10.2.2
Detailed Design Procedure
10.2.2.1
Calculations
10.2.2.1.1
Program the Fast Charge Current (ISET):
10.2.2.1.2
Program the Input Current Limit (ILIM)
10.2.2.1.3
Program 6.25-hour Fast-Charge Safety Timer (TMR)
10.2.2.2
TS Function
10.2.2.3
CHG and PGOOD
10.2.2.4
System ON/OFF (SYSOFF)
10.2.2.5
Selecting In, Out And Bat Pin Capacitors
10.2.3
Application Curves
11
Power Supply Recommendations
12
Layout
12.1
Layout Guidelines
12.2
Layout Example
12.3
Thermal Package
13
器件和文档支持
13.1
器件支持
13.1.1
第三方产品免责声明
13.2
文档支持
13.2.1
相关文档
13.3
接收文档更新通知
13.4
社区资源
13.5
商标
13.6
静电放电警告
13.7
术语表
14
机械、封装和可订购信息
封装选项
请参考 PDF 数据表获取器件具体的封装图。
机械数据 (封装 | 引脚)
RGT|16
散热焊盘机械数据 (封装 | 引脚)
RGT|16
QFND583A
订购信息
zhcsh01b_oa
zhcsh01b_pm
8.2
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic discharge
(1)
Human-body model (HBM), per AEC Q100-002
(2)
All pins
±2000
V
Charged-device model (CDM), per AEC Q100-011
±500
(1)
Electrostatic discharge (ESD) measures device sensitivity and immunity to damage caused by assembly line electrostatic discharges.
(2)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.