TIDA-011011
Isolated gate driver board with isolated bias supply for 3.3kV SiC-FET reference design
TIDA-011011
概述
This reference design provides a template for implementing gate drive designs for field effect transistors (FETs) rated up to 3.3kV. By utilizing single-channel isolated pre-drivers with split outputs, multiple variants of power FETs can be driven while maintaining high current sink and source capability. The performance of the driving design is further enhanced by incorporating a DC/DC isolated bias supply with controlled output rail voltages, enabling lower RDS(on) operation.
特性
- Gate driver design for FETs rated with voltage up to 3.3kV
- Pre-drivers with split output designs
- Controlled gate driver voltage rails
| 输出电压选项 | TIDA-011011.1 |
|---|---|
| 输入电压（最小值）(V) | 10.8 |
| 输入电压（最大值）(V) | 13.2 |
| 输出电压（标称值）(V) | 18 |
| Iout（最大值）(A) | .1 |
| 输出功率 (W) | 1.8 |
| 隔离/非隔离 | Isolated |
| 输入类型 | DC |
| 拓扑 | Other |
我们开发的全面组装电路板仅用于测试和性能验证，不可用于销售。
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| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 设计指南 | Isolated Gate Driver Board With Isolated Bias Supply for 3.3kV SiC-FET Reference Design | PDF | HTML | 2026-3-20 |