UCC218915-Q1
- 5kVRMS single-channel isolated pre-driver
- AEC-Q100 qualified for automotive
applications
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
- SiC MOSFETs and IGBTs up to 1500Vpk
- 36V maximum output drive voltage (VDD-VEE)
- 2.8A outputs for directly driving external buffer PMOS/NMOS pair.
- 200V/ns minimum CMTI
- 200ns response time fast DESAT protection with 9V threshold
- External active Miller clamp
- Dedicated Soft Shut Down (SSD) pin with 1A sinking capability. Shut down current is controllable by an external resistor.
- ASC input on isolated side to turn on power switch during system fault. ASC status reported through ASC_FB on low-voltage side.
- Overcurrent reporting on FLT and reset from RST/EN
- Fast enable/disable response on RST/EN
- 12V VDD UVLO with power good on RDY
- Overtemperature protection with power good on RDY
- 100ns (maximum) propagation delay
- 28-DFP wide body package with creepage and clearance distance > 8mm
- Operating junction temperature –40°C to 150°C
The UCC218915-Q1 is a galvanically isolated single channel pre-driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC218915-Q1 has dual 2.8A outputs for directly driving an external buffer NMOS/PMOS pair.
The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage, 10kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >200V/ns common mode noise immunity (CMTI).
The UCC218915-Q1 includes state-of-art protection features, such as fast overcurrent and short circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, active short circuit input on the high-voltage side and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | UCC218915-Q1 Single Channel Isolated Pre-Driver for SiC/IGBT with Active Protection for Automotive Applications datasheet | PDF | HTML | 2025/9/16 |
設計與開發
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UCC2189X5YQEVM-096 — UCC2189X5Y 評估模組
TIDA-011011 — 適用於 3.3kV SiC-FET 且具有隔離偏壓電源的隔離式閘極驅動器電路板參考設計
此參考設計提供為額定電壓高達 3.3kV 之場效電晶體 (FET) 實作閘極驅動設計的範本。運用具有分離輸出的單通道隔離式預驅動器,可驅動多種功率 FET 變體,同時維持高電流汲極和源極能力。透過整合具控制輸出軌電壓的 DC/DC 隔離式偏壓電源,可降低 RDS(on) 運作,進一步強化驅動設計性能。
TIDA-011012 — 適合中壓應用的 50kW SiC 式模組化固態變壓器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SSOP (DFP) | 28 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。