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UCC21750-Q1

現行

適用於 IGBT/SiC 且具有 DESAT 和內部鉗位的車用 5.7kVrms、±10A 單通道絕緣式閘極驅動器

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產品規格表

UCC21750-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Desaturation (DESAT) protection, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Desaturation (DESAT) protection, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C3
  • SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C3
  • SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program

The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC21750-Q110-A Source/Sink Reinforced Isolated Single Channel Gate Driverfor SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. D) PDF | HTML 2023/11/6
證書 VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 2026/7/15
EVM User's guide UCC2181xx, UCC217xx, and ISO5x5x Evaluation Module (Rev. A) PDF | HTML 2026/6/8
白皮書 以可靠且經濟實惠的隔離技術解決高 電壓設計挑戰 PDF | HTML PDF | HTML 2026/5/28
白皮書 A Comprehensive Analysis of Different Short-Circuit Protection Methods for SiC MOSFETs PDF | HTML 2025/11/4
Application brief Does My Design Need a Miller Clamp? PDF | HTML 2024/12/11
應用說明 Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 2024/7/19
證書 UCC217xx/-Q1 CQC Certificate of Product Certification 2023/6/7
證書 UCC21750QDWEVM-054 EU RoHS Declaration of Conformity (DoC) 2022/8/24
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021/12/16
應用說明 Performance of the Analog PWM Channel in Smart Gate Drivers 2020/1/16
設計指南 SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 2019/12/18
使用指南 UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 2019/9/9
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 2019/1/30

設計與開發

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開發板

UCC21750QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板

UCC21750QDWEVM-025 是一款精巧的單通道絕緣式閘極驅動器電路板，可提供 SiC MOSFET 和 Si IGBT 電源模組所需的驅動、偏電壓、去飽和功能式保護和診斷功能，採用 150 x 62 x 17mm 和 106 x 62 x 30mm 封裝。此 TI EVM 是以 SOIC-16DW 封裝，沿面距離與電氣間隙為 8.0mm 的 5.7 kVrms 強化型隔離驅動器 UCC21750 為基礎。EVM 包括 SN6505B 架構的隔離式 DC-DC 變壓器偏壓電源供應器。
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模擬型號

UCC21750 PSpice Transient Model

SLUM680.ZIP (90 KB) - PSpice 模型
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模擬型號

UCC21750 Unencrypted PSPICE Transient Model

SLUM718.ZIP (6 KB) - PSpice 模型
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計算工具

SLUC695 — UCC217xx XL Calculator Tool

Calculator enable customer design in terms of switching frequency and OC/DESAT, STO timing
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參考設計

PMP23223 — 配備偏壓電源的智慧型隔離式閘極驅動器參考設計

此參考設計展示 UCC21732 柵極驅動器與 UCC14xxx 系列偏壓電源的組合。此設計可用於驅動各種電源開關，其中包括直接連接至 Wolfspeed 碳化矽 (SiC) 場效應電晶體 (FET) 模組。此參考設計也可做為高側或低側驅動器，或是可以用電容模擬負載進行測試。

UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 皆屬於整合式偏壓電源的直接投入使用的替代產品，每個元件都具備不同的目標輸入電壓和輸出功率。

UCC14xxx-Q1 資訊：

  • UCC14240-Q1
    • 隔離：基本
    • 輸入電壓 (V)：24 (21 至 27)
    • 輸出電壓 (V)：25 (18 至 25)
    • 功率輸出 (...)
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