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UCC21711-Q1

現行

適用於 SiC/IGBT 且具過電流保護功能的車用 5.7kVrms、+-10A 單通道絕緣式閘極驅動器

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產品規格表

UCC21711-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Over Current Protection, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety-Capable
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Over Current Protection, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety-Capable
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • UL 1577 component recognition program (planned)
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • UL 1577 component recognition program (planned)

The UCC21711-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21711-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21711-Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21711-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21711-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21711-Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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* Data sheet UCC21711-Q1 10A Automotive Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet PDF | HTML 2025年 12月 12日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC21710QDWEVM-054 — 適用 Wolfspeed® 1,200V SiC 平台的 UCC21710 評估模組

UCC21710QDWEVM-054 是精巧型半橋閘極驅動器評估模組，由兩個單通道及隔離式閘極驅動器組成。此評估模組針對數種不同 Wolfspeed® 碳化矽 (SiC) MOSFET 模組和離散式 SiC MOSFET，以及具備類似接腳配置的其他絕緣柵極雙極電晶體 (IGBT) 或 SiC MOSFET 模組，提供驅動所需的供應電壓、驅動、保護與監控功能。

使用指南: PDF
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模擬型號

UCC21710 PSpice Transient Model

SLUM679.ZIP (89 KB) - PSpice Model
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模擬型號

UCC21710 Unencrypted PSpice Transient Model

SLUM716.ZIP (6 KB) - PSpice Model
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模擬型號

UCC21732QDWRQ1 PSPICE Model

SLUM723.ZIP (6 KB) - PSpice Model
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計算工具

SLUC695 — UCC217xx XL Calculator Tool

Calculator enable customer design in terms of switching frequency and OC/DESAT, STO timing
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設計工具

UCC217X1-Q1-DESIGN-FS — Functional Safety Documents for UCC21711-Q1 and UCC21751-Q1

Functional Safety Documents for UCC21711-Q1 and UCC21751-Q1
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配置圖

UCC21710QDWEVM-054 Schematic Files

SLURB29.ZIP (323 KB)
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一，涵蓋我們的類比和電源產品組合，以及特定類比行為模型，且使用無需支付費用。

PSpice for TI 設計和模擬環境可讓您使用其內建函式庫來模擬複雜的混合訊號設計。在進行佈局和製造之前，建立完整的終端設備設計和解決方案原型，進而縮短上市時間並降低開發成本。 

在 PSpice for TI 設計與模擬工具中，您可以搜尋 TI (...)
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參考設計

PMP23223 — 配備偏壓電源的智慧型隔離式閘極驅動器參考設計

此參考設計展示 UCC21732 柵極驅動器與 UCC14xxx 系列偏壓電源的組合。此設計可用於驅動各種電源開關，其中包括直接連接至 Wolfspeed 碳化矽 (SiC) 場效應電晶體 (FET) 模組。此參考設計也可做為高側或低側驅動器，或是可以用電容模擬負載進行測試。

UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 皆屬於整合式偏壓電源的直接投入使用的替代產品，每個元件都具備不同的目標輸入電壓和輸出功率。

UCC14xxx-Q1 資訊：

  • UCC14240-Q1
    • 隔離：基本
    • 輸入電壓 (V)：24 (21 至 27)
    • 輸出電壓 (V)：25 (18 至 25)
    • 功率輸出 (...)
Test report: PDF
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SOIC (DW) 16 Ultra Librarian
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