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接地位準轉換器

TXG8122-Q1

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適用於 I2C 訊號的車用 2 位元雙向 80V 接地位準轉換器

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產品規格表

TXG8122-Q1

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產品規格表 立即訂購

產品詳細資料

Rating Automotive Ground offset voltage (max) (V) 80 Bits (#) 2 Topology Open drain Applications GPIO, I2C, SMBus Forward/reverse channels 2/2 Isolation rating Functional Data rate (max) (Mbps) 2 Prop delay (ns) 69 CMTI (V/µs) 500 Output drive capability (max) (mA) 50 Technology family TXG Vin (min) (V) 3 Vin (max) (V) 5.5 Vout (min) (V) 2.25 Vout (max) (V) 5.5 Current consumption per channel (1 Mbps) (typ) (mA) 4.2 Features AEC Q100
Rating Automotive Ground offset voltage (max) (V) 80 Bits (#) 2 Topology Open drain Applications GPIO, I2C, SMBus Forward/reverse channels 2/2 Isolation rating Functional Data rate (max) (Mbps) 2 Prop delay (ns) 69 CMTI (V/µs) 500 Output drive capability (max) (mA) 50 Technology family TXG Vin (min) (V) 3 Vin (max) (V) 5.5 Vout (min) (V) 2.25 Vout (max) (V) 5.5 Current consumption per channel (1 Mbps) (typ) (mA) 4.2 Features AEC Q100
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • AEC-Q100 qualified for automotive applications
  • Bidirectional I2C compatible communication
  • Support for Standard-mode, Fast-mode, and Fast-mode Plus I2C operation
  • Supports DV shifts up to ±80V
  • Data rate up to 1MHz
  • Side 1 Supply Range: 3V to 5.5V
  • Side 2 Supply Range: 2.25V to 5.5V
  • Maximum capacitive load:
    • 80pF (Side 1) and 550pF (Side 2)
  • Open -drain outputs with current sink capability:
    • 3.5mA (Side 1) and 50mA (Side 2)
  • Low power consumption at 400kHz (typical):
    • ICC1 = 3.1mA, ICC2 = 0.7mA
  • Operating temperature from –40°C to +125°C
  • CMTI of 500V/µs
  • Latch-up performance exceeds 100mA per JESD 78, class II
  • ESD protection exceeds JESD 22
    • 2000V human-body model
    • 500V charged-device model
  • Package options provided: SOIC (8D), WSON (8DSG), SOT-23 (8DDF)
  • AEC-Q100 qualified for automotive applications
  • Bidirectional I2C compatible communication
  • Support for Standard-mode, Fast-mode, and Fast-mode Plus I2C operation
  • Supports DV shifts up to ±80V
  • Data rate up to 1MHz
  • Side 1 Supply Range: 3V to 5.5V
  • Side 2 Supply Range: 2.25V to 5.5V
  • Maximum capacitive load:
    • 80pF (Side 1) and 550pF (Side 2)
  • Open -drain outputs with current sink capability:
    • 3.5mA (Side 1) and 50mA (Side 2)
  • Low power consumption at 400kHz (typical):
    • ICC1 = 3.1mA, ICC2 = 0.7mA
  • Operating temperature from –40°C to +125°C
  • CMTI of 500V/µs
  • Latch-up performance exceeds 100mA per JESD 78, class II
  • ESD protection exceeds JESD 22
    • 2000V human-body model
    • 500V charged-device model
  • Package options provided: SOIC (8D), WSON (8DSG), SOT-23 (8DDF)

The TXG8122-Q1 device is a dual bidirectional, non-galvanic based voltage and ground-level translator for I2C. This device supports two separate configurable power-supply rails. Side 1 is designed to track VCC1 which accepts any supply voltage from 3V to 5.5V. Side 2 is designed to track VCC2 which accepts any supply voltage from 2.25V to 5.5V. Compared to traditional level shifters, the TXG8122-Q1 can solve the challenges of voltage translation across different ground levels up to ±80V. Both GNDA or GNDB can have an offset ground as long as the difference between GNDA and GNDB remains -80V to +80V.

The Simplified Block Diagram shows a common use case where DC shift occurs between GNDA to GNDB due to parasitic resistance or capacitance. The TXG8122-Q1 is able to support I2C-based communication between systems that have different supply voltages and different ground references. The leakage between GNDA and GNDB is typically 50nA when VCC to GND is shorted.

The TXG8122-Q1 device is a dual bidirectional, non-galvanic based voltage and ground-level translator for I2C. This device supports two separate configurable power-supply rails. Side 1 is designed to track VCC1 which accepts any supply voltage from 3V to 5.5V. Side 2 is designed to track VCC2 which accepts any supply voltage from 2.25V to 5.5V. Compared to traditional level shifters, the TXG8122-Q1 can solve the challenges of voltage translation across different ground levels up to ±80V. Both GNDA or GNDB can have an offset ground as long as the difference between GNDA and GNDB remains -80V to +80V.

The Simplified Block Diagram shows a common use case where DC shift occurs between GNDA to GNDB due to parasitic resistance or capacitance. The TXG8122-Q1 is able to support I2C-based communication between systems that have different supply voltages and different ground references. The leakage between GNDA and GNDB is typically 50nA when VCC to GND is shorted.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TXG8122-Q1 ± 80V Bidirectional Ground-Level Translator for I2C datasheet PDF | HTML 2025/6/6
Application brief Solving Ground Shift Issues in Phase Array Satellites PDF | HTML 2026/7/30
Application brief Top Questions about Ground-Level Translators PDF | HTML 2026/5/27
應用說明 Solving Ground Mismatch in Automotive Systems PDF | HTML 2026/3/3
技術文章 接地電位不均？以新型的接地電平轉換器解決偏移挑戰 (Rev. A) PDF | HTML Download English Version (Rev.A) PDF | HTML 2025/6/5
Application brief Not All Grounds Are 0V PDF | HTML 2025/5/21
Product overview TI's Latest Ground-Level Translators PDF | HTML 2025/5/7

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TXG-4CH-EVM — 適用於 4 通道接地位準轉換器的 TXG 評估模組

TXG-4CH-EVM 是用於評估 TXGx04x 4 通道接地位準轉換器產品系列的評估模組 (EVM)。EVM 支援多種封裝選項，其中包括 16 針腳 DBQ、14 針腳 DYY 和 14 針腳 RUC。EVM 具備多個測試點和連接選項，可對裝置進行評估。
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