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邏輯和電壓轉換
電壓轉換器及電平移位器
電壓轉換器

TXB0102

現行

具自動方向感測和 +/-15-kV ESD 保護的 2 位元雙向電壓位準移位器

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產品規格表

TXB0102

現行
立即訂購

產品詳細資料

Bits (#) 2 Data rate (max) (Mbps) 100 Topology Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.2 Vin (max) (V) 3.6 Vout (min) (V) 1.2 Vout (max) (V) 5.5 Applications GPIO, SPI, UART Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Technology family TXB Supply current (max) (mA) 0.008 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 2 Data rate (max) (Mbps) 100 Topology Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.2 Vin (max) (V) 3.6 Vout (min) (V) 1.2 Vout (max) (V) 5.5 Applications GPIO, SPI, UART Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Technology family TXB Supply current (max) (mA) 0.008 Rating Catalog Operating temperature range (°C) -40 to 85
VSSOP (DCU) 8 6.2 mm² (2 mm × 3.1 mm) DSBGA (YZP) 8 2.8125 mm² (— mm × — mm)
  • Available in the Texas Instruments NanoFree™ Packages
  • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V On B Port (V CCA ≤ V CCB)
  • V CC Isolation Feature – If Either V CC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to V CCA
  • Low Power Consumption, 4-µA Max I CC
  • I off Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2500-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
    • B Port
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
  • Available in the Texas Instruments NanoFree™ Packages
  • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V On B Port (V CCA ≤ V CCB)
  • V CC Isolation Feature – If Either V CC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to V CCA
  • Low Power Consumption, 4-µA Max I CC
  • I off Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2500-V Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)
    • B Port
      • 15-kV Human-Body Model (A114-B)
      • 200-V Machine Model (A115-A)
      • 1500-V Charged-Device Model (C101)

The TXB0102 device is a 2-bit noninverting translator that uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track V CCB. V CCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. V CCA must not exceed V CCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

This device is fully specified for partial-power-down applications using I off. The I off circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

OE must be tied to GND through a pulldown resistor to assure the high-impedance state during power up or power down; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

NanoFree™ technology is a major breakthrough in IC packaging concepts, using the die as the package.

The TXB0102 device is a 2-bit noninverting translator that uses two separate configurable power-supply rails. The A port is designed to track V CCA. V CCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track V CCB. V CCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. V CCA must not exceed V CCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

This device is fully specified for partial-power-down applications using I off. The I off circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

OE must be tied to GND through a pulldown resistor to assure the high-impedance state during power up or power down; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

NanoFree™ technology is a major breakthrough in IC packaging concepts, using the die as the package.
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針腳對針腳的功能與所比較的裝置相同。
TXU0102 現行 具相同方向通道之雙通道固定方向位準移位器 2 channel fixed direction level translator
TXU0202 現行 具有反向通道的雙通道固定方向位準移位器 2 channel fixed direction level translator
功能相同，但針腳輸出與所比較的裝置不同。
TXB0108 現行 具自動方向感測和 +/-15-kV ESD 保護的 8 位元雙向電壓位準移位器 Same function in 8-channel version
TXB0104 現行 具自動方向感測和 +/-15-kV ESD 保護的 4 位元雙向電壓位準移位器 Same function for 4-channel voltage translator

技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TXB0102 2-Bit Bidirectional Voltage-Level Translator With Auto Direction Sensing and ±15-kV ESD Protection datasheet (Rev. E) PDF | HTML 2023/10/17
應用說明 Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024/7/12
應用說明 Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024/7/3
應用說明 Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 2023/9/29
應用說明 Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 2023/6/28
選擇指南 Voltage Translation Buying Guide (Rev. A) 2021/4/15
應用說明 Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A) 2018/3/28
應用說明 Factors Affecting VOL for TXS and LSF Auto-bidirectional Translation Devices 2017/11/19
應用說明 Biasing Requirements for TXS, TXB, and LSF Auto-Bidirectional Translators 2017/10/30
應用說明 A Guide to Voltage Translation With TXS-Type Translators 2010/6/29
應用說明 A Guide to Voltage Translation With TXB-Type Translators 2010/3/3

設計與開發

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開發板

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靈活的 EVM 旨在支援任何針腳數為 5 至 8 支且採用 DCK、DCT、DCU、DRL 或 DBV 封裝的裝置。
使用指南: PDF
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開發板

TXB-EVM — 1 至 8 位元 TXB 轉換器系列評估模組

此 EVM 專為支援 TXB 自動雙向系列的單通道、雙通道、四通道及八通道裝置而設計。TXB 裝置屬於自動雙向轉換系列，操作電壓範圍設計於 1.2V 至 5.5V 之間的電平轉換。
使用指南: PDF | HTML
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模擬型號

TXB0102 IBIS Model (Rev. A)

SCEM563A.ZIP (71 KB) - IBIS 模型
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參考設計

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TIDA-00403 參考設計使用針對超音波距離量測解決方案的現成 EVM，該解決方案使用 TLV320AIC3268 miniDSP 中的演算法。與 TI 的 PurePath Studio 設計套件搭配使用，只需按滑鼠即可設計穩固且使用者可配置的超音波距離量測系統。使用者可修改超音波突衝產生特性和偵測演算法，以配合工業和測量應用的特定使用案例，讓使用者能夠克服其他固定功能感測器的限制，同時提高量測可靠性。TLV320AIC3268 上的兩個 GPIO 會自動觸發，表示發射與接收的超音波突衝。透過監控這些 GPIO 的主機 MCU，即可擷取飛行時間。

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參考設計

TIDM-RF430FRLSENSE — RF430FRL152H NFC 溫度及燈光感測器參考設計

此參考設計提供評估 RF430FRL152H NFC 感測器介面轉發器的平台。  熱敏電阻和光電晶體測量功能開箱即用，測得的結果可傳輸到支援 NFC 的智慧型手機或其他 NFC/RFID 讀取器裝置。  此參考設計搭配電池運作時可將資料記錄至 FRAM；不使用電池時則可使用 RF 電場所收集的能量。

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VSSOP (DCU) 8 Ultra Librarian
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