首頁 交換器與多工器 類比交換器與多工器 通訊協定與匯流排開關與多工器
首頁
交換器與多工器
類比交換器與多工器
通訊協定與匯流排開關與多工器

TS3DDR3812

現行

適用 DDR3 應用的 3.3-V、2:1 (SPDT) 12 通道開關

立即訂購
產品規格表

TS3DDR3812

現行
產品規格表 立即訂購

產品詳細資料

Protocols DDR3 Configuration 2:1 SPDT Number of channels 12 Bandwidth (MHz) 1675 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 8000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Supply current (typ) (µA) 300 ESD HBM (typ) (kV) 2 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -71 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5.6 CON (typ) (pF) 2 Off isolation (typ) (dB) -42 OFF-state leakage current (max) (µA) 1 Propagation delay time (µs) 0.00004 Ron (max) (mΩ) 12000 Ron channel match (max) (Ω) 1 RON flatness (typ) (Ω) 1.5 Turnoff time (disable) (max) (ns) 5 Turnon time (enable) (max) (ns) 7 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
Protocols DDR3 Configuration 2:1 SPDT Number of channels 12 Bandwidth (MHz) 1675 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 8000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Supply current (typ) (µA) 300 ESD HBM (typ) (kV) 2 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -71 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5.6 CON (typ) (pF) 2 Off isolation (typ) (dB) -42 OFF-state leakage current (max) (µA) 1 Propagation delay time (µs) 0.00004 Ron (max) (mΩ) 12000 Ron channel match (max) (Ω) 1 RON flatness (typ) (Ω) 1.5 Turnoff time (disable) (max) (ns) 5 Turnon time (enable) (max) (ns) 7 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
WQFN (RUA) 42 31.5 mm² 9 x 3.5
  • Compatible with DDR3 SDRAM Standard (JESD79-3D)
  • Wide Bandwidth of 1.675 GHz
  • Low Propagation Delay (tpd = 40 ps Typ)
  • Low Bit-to-Bit Skew (tsk(o) = 6 ps Typ)
  • Low and Flat ON-State Resistance
    (rON = 8 Ω Typ)
  • Low Input/Output Capacitance
    (CON = 5.6 pF Typ)
  • Low Crosstalk (XTALK = –43 dB,
    Typ at 250 MHz)
  • VCC Operating Range from 3 V to 3.6 V
  • Rail-to-Rail Switching on Data I/O Ports
    (0 to VCC)
  • Separate Switch Control Logic for Upper and Lower 6-Channels
  • Dedicated Enable Logic Supports Hi-Z Mode
  • IOFF Protection Prevents Current Leakage in Powered Down State (VCC = 0 V)
  • ESD Performance Tested Per JESD22
    • 2000 V Human Body Model
      (A114B, Class II)
    • 1000 V Charged Device Model (C101)
  • 42-pin RUA Package (9 × 3.5 mm, 0.5 mm Pitch)
  • Compatible with DDR3 SDRAM Standard (JESD79-3D)
  • Wide Bandwidth of 1.675 GHz
  • Low Propagation Delay (tpd = 40 ps Typ)
  • Low Bit-to-Bit Skew (tsk(o) = 6 ps Typ)
  • Low and Flat ON-State Resistance
    (rON = 8 Ω Typ)
  • Low Input/Output Capacitance
    (CON = 5.6 pF Typ)
  • Low Crosstalk (XTALK = –43 dB,
    Typ at 250 MHz)
  • VCC Operating Range from 3 V to 3.6 V
  • Rail-to-Rail Switching on Data I/O Ports
    (0 to VCC)
  • Separate Switch Control Logic for Upper and Lower 6-Channels
  • Dedicated Enable Logic Supports Hi-Z Mode
  • IOFF Protection Prevents Current Leakage in Powered Down State (VCC = 0 V)
  • ESD Performance Tested Per JESD22
    • 2000 V Human Body Model
      (A114B, Class II)
    • 1000 V Charged Device Model (C101)
  • 42-pin RUA Package (9 × 3.5 mm, 0.5 mm Pitch)

The TS3DDR3812 is a 12-channel, 1:2 multiplexer/demultiplexer switch designed for DDR3 applications. It operates from a 3 to 3.6 V supply and offers low and flat ON-state resistance as well as low I/O capacitance which allow it to achieve a typical bandwidth of 1.675 GHz.

Channels A0 through A11 are divided into two banks of six bits and are independently controlled via two digital inputs called SEL1 and SEL2. These select inputs control the switch position of each 6-bit DDR3 source and allow them to be routed to one of two end-points. Alternatively, the switch can be used to connect a single endpoint to one of two 6-bit DDR3 sources. For switching 12-bit DDR3 sources, simply connect SEL1 and SEL2 together externally and control all 12 channels with a single GPIO input. An EN input allows the entire chip to be placed into a high-impedance (Hi-Z) state while not in use.

These characteristics make the TS3DDR3812 an excellent choice for use in memory, analog/digital video, LAN, and other high-speed signal switching applications.

The TS3DDR3812 is a 12-channel, 1:2 multiplexer/demultiplexer switch designed for DDR3 applications. It operates from a 3 to 3.6 V supply and offers low and flat ON-state resistance as well as low I/O capacitance which allow it to achieve a typical bandwidth of 1.675 GHz.

Channels A0 through A11 are divided into two banks of six bits and are independently controlled via two digital inputs called SEL1 and SEL2. These select inputs control the switch position of each 6-bit DDR3 source and allow them to be routed to one of two end-points. Alternatively, the switch can be used to connect a single endpoint to one of two 6-bit DDR3 sources. For switching 12-bit DDR3 sources, simply connect SEL1 and SEL2 together externally and control all 12 channels with a single GPIO input. An EN input allows the entire chip to be placed into a high-impedance (Hi-Z) state while not in use.

These characteristics make the TS3DDR3812 an excellent choice for use in memory, analog/digital video, LAN, and other high-speed signal switching applications.

filter 尋找其它 通訊協定與匯流排開關與多工器
下載 觀看有字幕稿的影片 影片

您可能會感興趣的類似產品

open-in-new 比較替代產品
可直接投入的替代產品，相較於所比較的裝置，具備升級功能
TS3DDR4000 現行 3.3-V、2:1 (SPDT)、12 通道 DDR2、DDR3 & DDR4 切換器 Flipped logic polarity (normally closed)

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 1
類型 標題 日期
* Data sheet 12-CHANNEL, 1:2 MUX/DEMUX SWITCH FOR DDR3 APPLICATIONS datasheet (Rev. B) 2013年 6月 3日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

HSEC180ADAPEVM-AM2 — 適用於 AM261x 系統模組 (SOM) 評估模組的 HSEC180 轉接器電路板

此評估模組是用於 TI AM261x 系統模組 (SOM) 平台的 180 針腳高速邊緣卡 (HSEC) 轉接器，允許 SOM 型平台與 Sitara™/C2000™ HSEC 型 EVM 向下相容。HSEC180ADAPEVM-AM2 可將來自 SOM 電路板的 180 針腳連接至 HSEC 針腳，以便與舊版 Sitara/C2000 HSEC 擴充底座（如 TMDSHSECDOCK-AM263 和 TMDSHSECDOCK）一起使用。

使用指南: PDF | HTML
TI.com 無法提供
開發板

LP-AM263 — AM263x Arm® 架構 MCU 通用型 LaunchPad™ 開發套件

LP-AM263 是一款針對 AM263x 系列 Arm® 架構應用型 MCU 打造的高效能開發板。此電路板極適用於初始評估與原型，因為它提供標準化且使用方便的平台，可用於開發您的下一個應用程式。

 

LP-AM263 配備 AM2634 MCU (採用 Arm® 架構) 及其他元件，讓使用者可透過多種裝置介面 (包括工業乙太網路 (IE)、標準乙太網路、快速序列介面 (FSI) 等) 輕鬆打造原型。AM2634 支援各種 IE 協定如 EtherCAT、EtherNet/IP 和 PROFINET®。

 

這款延伸 LaunchPad™ XL 開發套件提供額外的 I/O (...)

使用指南: PDF | HTML
TI.com 無法提供
模擬型號

TS3DDR3812 HSpice Model

SCDM134.ZIP (113 KB) - HSpice Model
下載
模擬型號

TS3DDR3812 IBIS

SCDM135.ZIP (24 KB) - IBIS Model
下載
封裝 針腳 CAD 符號、佔位空間與 3D 模型
WQFN (RUA) 42 Ultra Librarian
適用 TI 的評估品項標準條款與條件。

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片