TPSI2240-Q1
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C TA
- Low EMI:
- Meets CISPR25 class 5 performance with no additional components
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- TPSI2240-Q1 IAVA = 1mA for 60s pulses
-
TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses
- TPSI2240T-Q1 IAVA = 3mA for 60s pulses
- 1200V standoff voltage
- RON = 130Ω (TJ = 25°C)
- TON, TOFF < 700µs
- IOFF = 1.22µA at 1000V (TJ = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 3.5µA OFF state current (TJ = 25°C)
-
Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
- Reinforced Isolation rating, VISO, up to 4750VRMS
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8mm (primary-secondary)
- Creepage and clearance ≥ 6mm (across switch terminals)
- Safety-related certifications
- (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
- (Planned) UL 1577 component recognition program
The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.
The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. A) | PDF | HTML | 2025/12/12 | ||
| 應用說明 | Design of Insulation Monitoring Device (IMD) in On-board Charger System With Active Single-Switch Architecture | PDF | HTML | 2026/1/30 | |||
| 功能安全資訊 | TPSI2240-Q1, TPSI2240C-Q1, and TPSI2240T-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) | PDF | HTML | 2026/1/26 | |||
| 應用說明 | Design Considerations for Large Y-Capacitor Resistive-Bridge DC Insulation Monitoring Device | PDF | HTML | 2026/1/15 | |||
| 證書 | TPSI2240Q1EVM EU Declaration of Conformity (DoC) | 2025/7/1 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
TPSI2240Q1EVM — TPSI2240-Q1 評估模組
TPSI2240X-Q1-HIPOT-RESISTANCE-CALC — TPSI2240x-Q1 HiPot 設計計算工具
TIDA-010985 — 適用於具有大型 Y 電容參考設計的 800V DC 系統的電阻橋絕緣監控裝置
此參考設計採用電阻橋絕緣監控裝置 (IMD)。此設計可準確偵測對稱和不對稱隔離電阻故障。此參考設計也可測量具有大型 Y 電容的高電壓 DC 系統電容。此設計符合 UL 標準的反應時間要求。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (DWQ) | 11 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。