TPS7H6005-SEP
- Radiation performance:
- Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 1.3A peak source, 2.5A peak sink current
- Two operational modes:
- Single PWM input with adjustable dead time
- Two independent inputs
- Selectable input interlock protection in independent input mode
- Split outputs for adjustable turn-on and turn-off times
- 30ns typical propagation delay in independent input mode
- 5.5ns typical delay matching
- Plastic packages outgas tested per ASTM E595
- Available in military temperature range (–55°C to 125°C)
The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), the TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs, which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.
The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.
The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers datasheet (Rev. C) | PDF | HTML | 2025/4/11 | ||
| * | 輻射及可靠性報告 | TPS7H6005-SP/-SEP, TPS7H6015-SP/-SEP, TPS7H6025-SP/-SEP Neutron Displacement Damage Characterization Report (Rev. B) | 2025/12/5 | |||
| * | 輻射及可靠性報告 | TPS7H6005-SEP Production Flow and Reliability Report (Rev. A) | PDF | HTML | 2025/2/24 | ||
| * | 輻射及可靠性報告 | TPS7H6005-SEP Total Ionizing Dose (TID) Report | PDF | HTML | 2024/12/10 | ||
| * | 輻射及可靠性報告 | TPS7H60X5-SEP Single-Event Effects (SEE) Report | PDF | HTML | 2024/11/14 | ||
| * | VID | TPS7H6005-SEP VID TPS7H6005-SEP V62-24632 | 2025/4/8 | |||
| 選擇指南 | TI Space Products (Rev. L) | 2026/3/27 | ||||
| 技術文章 | 如何為具有電子電源系統的下一代衛星最佳化 SWaP (Rev. A) | PDF | HTML | Download English Version (Rev.A) | PDF | HTML | 2025/3/20 | |
| 應用說明 | Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) | PDF | HTML | 2022/9/15 | |||
| 電子書 | Radiation Handbook for Electronics (Rev. A) | 2019/5/21 |
設計與開發
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TPS7H6005EVM — TPS7H6005-SEP 評估模組
TPS7H6005 評估模組展示了 TPS7H6005-SEP 柵極驅動器的運作情形。預設情況下，評估模組設定為以 TPS7H60XX-SP 的 PWM 模式運作，該模式接受一個切換訊號的輸入，並在內部產生互補訊號。這可變更為裝置的 IIM 模式，在此模式中，兩個輸出彼此獨立運作。
PMP23552 — 適用於航太任務範圍的 50VIN 至 150VIN、28V 12A 同步降壓轉換器參考設計
PMP23598 — 適合航太應用的 75-W 同步順向轉換器參考設計
此參考設計採用耐輻射 TPS7H5020-SEP 脈衝寬度調變 (PWM) 控制器和耐輻射 TPS7H6005-SEP 200V GaN 半橋閘極驅動器，可建立高效率的同步順向拓撲。若要取得準確、直接地感測輸出電壓並達到高迴路頻寬，需將 PWM 控制器置於二次側。半橋式閘極驅動器內的電容隔離 TX 和 RX 位準移位器，可將 PWM 波形從二次側傳輸至主要側，同時維持電氣隔離。
PMP23661 — 具備倍流轉換器的 500W、12V 輸出、ZVS 全橋參考設計
此參考設計為全橋拓樸結構，由參考二次接地的 TPS7H5005-SEP 組成，可控制四個 TPS7H6005-SEP 半橋閘極驅動器。參考一次側的兩個驅動器以 PWM 模式運作，讓設計能在高負載條件下實現零電壓切換 (ZVS)。在二次側，另一個驅動器以倍流器配置控制一對二次整流器，以進一步提升轉換效率。在此設計中，控制器、半橋驅動器和 GaN 場效電晶體 (FET) 的選擇是為了滿足地球同步軌道 (GEO) 的輻射需求。這些元件可換出以符合其他任務規格。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTSSOP (DCA) | 56 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。