TPS7H5020-SEP
- Radiation performance:
- Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 14V maximum input voltage for both controller and driver stages
- Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN
devices
- 1.2A peak source and sink capability at 12V
- Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
- Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
- 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
- Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
- External clock synchronization capability
- Adjustable slope compensation and soft start
- Plastic packages outgas tested per ASTM E595
- Available in military temperature range (–55°C to 125°C)
The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.
The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.
技術文件
設計與開發
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TPS7H5020EVM — TPS7H5020-SP 評估模組
TPS7H5020FLYEVM — TPS7H5020-SEP 和 QMLP 返馳評估模組
TPS7H5020FLYEVM 展示了 TPS7H5020-SEP PWM 控制器在返馳轉換器拓樸結構中驅動 GaN FET 開關元件的操作。EVM 提供可測試自訂配置的彈性。提供測試點和額外元件體積,以簡化裝置配置與性能驗證。
PMP23546 — 適用於偏壓電源供應的 2.4W 多輸出 PSR 返馳參考設計
此參考設計使用 TPS7H5020-SEP 作為一次側穩壓 (PSR) 返馳式轉換器。輸入接受 22V 至 36V 範圍,以產生參考至主要接地的 12V 偏壓,以及可參考其他迴路的另一個 12V 輸出。此參考設計可用於為 PMP23391 等隔離式參考設計提供偏壓電源。在此設計中,控制器、半橋驅動器和 TI 氮化鎵場效電晶體 (FET) 的選擇是為了滿足地球同步軌道 (GEO) 的輻射需求。這些元件可換出以符合其他任務規格。
PMP23598 — 適合航太應用的 75-W 同步順向轉換器參考設計
此參考設計採用耐輻射 TPS7H5020-SEP 脈衝寬度調變 (PWM) 控制器和耐輻射 TPS7H6005-SEP 200V GaN 半橋閘極驅動器,可建立高效率的同步順向拓撲。若要取得準確、直接地感測輸出電壓並達到高迴路頻寬,需將 PWM 控制器置於二次側。半橋式閘極驅動器內的電容隔離 TX 和 RX 位準移位器,可將 PWM 波形從二次側傳輸至主要側,同時維持電氣隔離。
TIDA-011004 — 航太級 3U VPX 電源供應模組參考設計
此參考設計為符合航太級 3U VPX 架構 VITA-62 標準的航太級電源供應模組。Space VPX 標準透過定義模組化且可擴充系統的架構,讓這類系統可用於各種不同的任務型態,從而實現了標準化和互操作性。此參考設計採用精巧外型尺寸實作,同時維持高整體性能。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTSSOP (PWP) | 24 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。