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DDR 記憶體電源 IC

TPS7H3302-SP

現行

Radiation-hardened, QML-P, 2.3V to 3.5V input, 3A sink and source DDR termination LDO regulator

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產品規格表

TPS7H3302-SP

現行
產品規格表 立即訂購

產品詳細資料

DDR memory type DDR2, DDR3, DDR4 Control mode S3, S4/S5 Iout VTT (max) (A) 3 Iq (typ) (mA) 18 Output VREF, VTT Vin (min) (V) 0.9 Vin (max) (V) 3.5 Features Complete Solution, Shutdown Pin for S3 Rating Space Operating temperature range (°C) -55 to 125 Regulator type Linear Regulator Vin bias (max) (V) 3.5 Vin bias (min) (V) 2.375 Vout VTT (min) (V) 0.6
DDR memory type DDR2, DDR3, DDR4 Control mode S3, S4/S5 Iout VTT (max) (A) 3 Iq (typ) (mA) 18 Output VREF, VTT Vin (min) (V) 0.9 Vin (max) (V) 3.5 Features Complete Solution, Shutdown Pin for S3 Rating Space Operating temperature range (°C) -55 to 125 Regulator type Linear Regulator Vin bias (max) (V) 3.5 Vin bias (min) (V) 2.375 Vout VTT (min) (V) 0.6
HTSSOP (DAP) 32 89.1 mm² (11 mm × 8.1 mm)
  • QMLP TPS7H3302-SP standard microcircuit drawing (SMD) available, 5962R14228
  • Space Ehanced Plastic Vendor item drawing available, VID V62/22615
  • Total ionizing dose (TID) charactericized
    • Radiation hardness assured (RHA) qualified up to total ionizing dose (TID) 100 krad(Si) or 50 krad(Si)
  • Single-Event Effects (SEE) Charactericized
    • Single event latch-up (SEL), single event gate rupture (SEGR), single event burnout (SEB) immune up to LET = 70 MeV-cm2 /mg
    • Single event transient (SET), single event functional interrupt (SEFI), and single event upset (SEU) characterized up to 70 MeVcm2 /mg
  • Supports DDR, DDR2, DDR3, DDR3L, and DDR4 termination applications
  • Input voltage: supports a 2.5-V and 3.3-V rail
  • Separate low-voltage input (VLDOIN) down to 0.9 V for improved power efficiency
  • 3-A sink and source termination regulator
  • Enable input and power-good output for power supply sequencing
  • VTT termination regulator
    • Output voltage range: 0.5 to 1.75 V
    • 3-A sink and source current
  • Integrated precision voltage divider network with sense input
  • Remote sensing (VTTSNS)
  • VTTREF buffered reference
    • 49% to 51% accuracy with respect to VDDQSNS (±3 mA)
    • ±10 mA sink and source current
  • Undervoltage lockout (UVLO) and overcurrent limit (OCL) functionality integrated
  • Plastic package
  • QMLP TPS7H3302-SP standard microcircuit drawing (SMD) available, 5962R14228
  • Space Ehanced Plastic Vendor item drawing available, VID V62/22615
  • Total ionizing dose (TID) charactericized
    • Radiation hardness assured (RHA) qualified up to total ionizing dose (TID) 100 krad(Si) or 50 krad(Si)
  • Single-Event Effects (SEE) Charactericized
    • Single event latch-up (SEL), single event gate rupture (SEGR), single event burnout (SEB) immune up to LET = 70 MeV-cm2 /mg
    • Single event transient (SET), single event functional interrupt (SEFI), and single event upset (SEU) characterized up to 70 MeVcm2 /mg
  • Supports DDR, DDR2, DDR3, DDR3L, and DDR4 termination applications
  • Input voltage: supports a 2.5-V and 3.3-V rail
  • Separate low-voltage input (VLDOIN) down to 0.9 V for improved power efficiency
  • 3-A sink and source termination regulator
  • Enable input and power-good output for power supply sequencing
  • VTT termination regulator
    • Output voltage range: 0.5 to 1.75 V
    • 3-A sink and source current
  • Integrated precision voltage divider network with sense input
  • Remote sensing (VTTSNS)
  • VTTREF buffered reference
    • 49% to 51% accuracy with respect to VDDQSNS (±3 mA)
    • ±10 mA sink and source current
  • Undervoltage lockout (UVLO) and overcurrent limit (OCL) functionality integrated
  • Plastic package

The TPS7H3302 is a radiation-hardend double data rate (DDR) 3-A termination regulator with built-in VTTREF buffer. The regulator is specifically designed to provide a complete, compact, low-noise solution for space DDR termination applications such as single board computers, solid state recorders, and payload processing.

The TPS7H3302 supports DDR VTT termination applications using DDR, DDR2, DDR3, DDR3L, and DDR4. The fast transient response of the TPS7H3302 VTT regulator allows for a very stable supply during read/write conditions. The TPS7H3302 also includes a built-in VTTREF supply that tracks VTT to further reduce the solution size. To enable simple power sequencing, both an enable input and a power-good output (PGOOD) have been integrated into the TPS7H3302. The enable signal can also be used to discharge VTT during suspend to RAM (S3) power down mode.

The TPS7H3302 is a radiation-hardend double data rate (DDR) 3-A termination regulator with built-in VTTREF buffer. The regulator is specifically designed to provide a complete, compact, low-noise solution for space DDR termination applications such as single board computers, solid state recorders, and payload processing.

The TPS7H3302 supports DDR VTT termination applications using DDR, DDR2, DDR3, DDR3L, and DDR4. The fast transient response of the TPS7H3302 VTT regulator allows for a very stable supply during read/write conditions. The TPS7H3302 also includes a built-in VTTREF supply that tracks VTT to further reduce the solution size. To enable simple power sequencing, both an enable input and a power-good output (PGOOD) have been integrated into the TPS7H3302. The enable signal can also be used to discharge VTT during suspend to RAM (S3) power down mode.

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TPS7H3301-SP 現行 Radiation-hardened, QML-V, 2.3V to 3.5V input, 3A sink and source DDR termination LDO regulator QMLV ceramic package with same radiation performance

技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPS7H3302-SP and TPS7H3302-SEP 3-A DDR Radiation Hardened Termination Regulator datasheet (Rev. B) PDF | HTML 2023/12/14
* 輻射及可靠性報告 TPS7H3302-SEP and TPS7H3302-SP Neutron Displacement Damage Characterization Test Report (Rev. A) 2024/2/16
* 輻射及可靠性報告 TPS7H3301-SP and TPS7H3302-SP Single-Event Effects Radiation Report (Rev. C) 2024/1/26
* 輻射及可靠性報告 TPS7H3302-QMLP Total Ionizing Dose (TID) Report 2023/11/17
* SMD TPS7H3302-SP SMD 5962-14228 2023/12/21
選擇指南 TI Space Products (Rev. L) 2026/3/27
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025/6/17
應用說明 Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025/6/10
更多文件說明 TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 2025/2/20
應用說明 QML flow, its importance, and obtaining lot information (Rev. C) 2023/8/30
應用說明 DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020/8/21
應用說明 DDR VTT Power Solutions: A Competitive Analysis (Rev. A) 2020/7/9
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21
應用說明 External Soft-Start Circuit for TPS7H3301-SP Power-Up Sequencing Applications 2016/7/7

設計與開發

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開發板

TPS7H3302EVM — 適用於 3-A 汲極和源極 DDR 終端 LDO 穩壓器的 TPS7H3302 評估模組

TPS7H3302 (LP085) 評估模組 (EVM) 是一套評估 TPS7H3302-SEP 的性能與特性的平台，即為耐輻射 DDR、DDR2、DDR3、DDR3L 和 DDR4 終止低壓差 (LDO) 穩壓器。

使用指南: PDF | HTML
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TPS7H3302-SEP PSpice Model

SLVME03.ZIP (45 KB) - PSpice 模型
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