TPS54116-Q1
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C6
- Single-chip DDR2, DDR3 and DDR3L Memory Power Solution
- 4-A Synchronous Buck Converter
- Integrated 33-mΩ High-side and 25-mΩ Low-side MOSFETs
- Fixed Frequency Current-mode Control
- Adjustable Frequency from 100 kHz to 2.5 MHz
- Synchronizable to an External Clock
- 0.6-V ±1% Voltage Reference Over Temperature
- Adjustable Cycle-by-Cycle Peak Current Limit
- Monotonic Start-up Into Pre-biased Outputs
- 1-A Source/Sink Termination LDO with ±20-mV DC Accuracy
- Stable with 2 × 10-µF MLCC Capacitor
- 10-mA Source/Sink Buffered Reference Output Regulated to Within 49% to 51% of VDDQ
- Independent Enable Pins with Adjustable UVLO and Hysteresis
- Thermal Shutdown
- –40°C to 150°C Operating TJ
- 24-pin, 4-mm × 4-mm WQFN Package
The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.
The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.
The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.
Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.
Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | TPS54116-Q1 2.95-V to 6-V Input, 4-A Step-Down Converter and 1-A Source/Sink DDR Termination Regulator datasheet (Rev. B) | PDF | HTML | 2016/10/17 | ||
| 使用指南 | Single LP8733-Q1 User's Guide to Power DRA78x and TDA3 (Rev. A) | PDF | HTML | 2021/3/31 | |||
| 應用說明 | DDR VTT Power Solutions: A Competitive Analysis (Rev. A) | 2020/7/9 | ||||
| 技術文章 | Improving DDR Memory Performance in Automotive Applications | PDF | HTML | 2017/6/22 | |||
| 技術文章 | Four design tips to obtain 2MHz switching frequency | PDF | HTML | 2016/10/3 |
設計與開發
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TPS54116-Q1EVM-830 — TPS54116-Q1 車用 DDR 電源解決方案評估模組
此評估模組旨在展示採用 TPS54116-Q1 穩壓器設計時，可實現的精簡印刷電路板面積。外部分壓器實現可調整的輸出電壓。TPS54116-Q1 DC/DC 轉換器是一款同步降壓轉換器，旨在提供最高 4A 的輸出，以及用於 DDR 記憶體終端的整合式 1A 源極/汲極 LDO。
TIDA-00530 — 適用於低功耗 TDA3x 系統的車用電源參考設計
該解決方案旨在利用汽車電池輸入，為使用 TDA3x SoC 的 ADAS 應用打造一體整合、尺寸最佳化的電源設計。 透過只將處理需求較低的應用作為目標，我們可以選擇比使用高效能處理器的系統中更小的裝置和元件。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WQFN (RTW) | 24 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。