產品詳細資料

Continuous current (max) (A) 82 Rating Automotive Sensitivity (typ) (mV/mT) 25, 33, 50, 75, 100, 150 Input offset current (±) (max) (mA) 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 867, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (kHz) 1000 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 82 Rating Automotive Sensitivity (typ) (mV/mT) 25, 33, 50, 75, 100, 150 Input offset current (±) (max) (mA) 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 867, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (kHz) 1000 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to 125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±10µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Fast Response
    • Signal bandwidth: 1MHz
    • Response time: 120ns
    • Propagation delay: 50ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 20mV/A to 150mV/A
  • Safety related certifications
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to 125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±10µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Fast Response
    • Signal bandwidth: 1MHz
    • Response time: 120ns
    • Propagation delay: 50ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 20mV/A to 150mV/A
  • Safety related certifications
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1133-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

The TMCS1133-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

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類型 標題 日期
* Data sheet TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage , Overcurrent Detection and Ambient Field Rejection datasheet (Rev. B) PDF | HTML 2025年 6月 6日
Application note A Comparison of Fused Lead Frame and Non-Fused Lead Frame Variants of Hall Effect Current Sensors PDF | HTML 2025年 9月 11日
Functional safety information TMCS1123-Q1, TMCS1126-Q1, TMCS1127-Q1, and TMCS1133-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) PDF | HTML 2025年 5月 5日
Application note Using the TMCS11xx in High Electromagnetic Interference Applications PDF | HTML 2025年 3月 6日
Application note Thermal Analysis of the TMCS1123 Hall-Effect Current Sensor PDF | HTML 2025年 1月 21日
Certificate TMCS1133AEVM EU Declaration of Conformity (DoC) 2023年 8月 21日
Certificate TMCS1133BEVM EU Declaration of Conformity (DoC) 2023年 8月 21日
Certificate TMCS1133CEVM EU Declaration of Conformity (DoC) 2023年 8月 21日

設計與開發

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開發板

TMCS-A-ADAPTER-EVM — 適用於 DVG、DVF 或 DZP 封裝的 TMCS 隔離式霍爾效應電流感測器轉接卡 (不包括 IC)

TMCS-A-ADAPTER-EVM 是一款評估模組 (EVM),旨在協助快速、便利地使用採用 DVG、DVF 或 DZP 封裝的 TMCS 隔離式霍爾效應精密電流感測監控器。此 EVM 可讓使用者在透過隔離層測量隔離輸出時,將高達 90A 的電流推經霍爾輸入側。TMCS-A-ADAPTER-EVM 包含一個未組裝的 PCB,其具備可安裝測試點和分接接頭針腳的位置,以評估裝置。PCB 焊盤是重疊的,因此任何 DVG、DVF 或 DZP TMCS 零件都可以搭配 TMCS-A-ADAPTER-EVM 使用。

使用指南: PDF | HTML
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開發板

TMCS1133EVM — TMCS1133 評估模組

TMCS1133EVM 評估模組 (EVM) 是一款工具,旨在協助方便快速地使用 TMCS1133,這是採用內部參考的隔離式霍爾效應精密電流感測監控器。此 EVM 可讓使用者在量測隔離輸出時,將最大操作電流推經霍爾輸入側,同時透過強化型隔離層量測隔離輸出。此固定裝置佈局不做為目標電路模型使用,也不是為了電磁 (EMI) 測試所進行的佈局。此 EVM 包含單一印刷電路板 (PCB),可分為五個獨立部分,讓使用者可測試單一靜態點的所有靈敏度變化 (A = 2.5V、B = 1.65V 或 C = 0.33V)。

使用指南: PDF | HTML
模擬型號

TMCS1133 and TMCS1133-Q1 PSpice Transient Model (TMCS1133x1A)

SBOMCQ9.ZIP (8 KB) - PSpice Model
模擬型號

TMCS1133 and TMCS1133-Q1 TINA-TI Reference Design

SBOMCR7.ZIP (127 KB) - TINA-TI Reference Design
計算工具

CS-MAGNETIC-ERROR-TOOL-CALC Hall-Effect Current Sensor Comparison and Error Tool

Hall-Effect Current Sensor Comparison and Error Tool
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支援產品和硬體

產品
霍爾效應電流感測器
TMCS1100 具有外部參考的 ±600V 基本隔離 20Arms 80kHz 霍爾效應電流感測器 TMCS1101-Q1 具有內部參考的 AEC-Q100、±600-V 精密隔離式電流感測器 TMCS1100-Q1 具有外部參考的 AEC-Q100、±600-V 精密隔離式電流感測器 TMCS1101 具有參考的 ±600V 基本隔離 20Arms 80kHz 霍爾效應電流感測器 TMCS1107 具有參考的 ±420V 基本隔離 20Arms 80kHz 霍爾效應電流感測器 TMCS1107-Q1 具有內部參考的 AEC-Q100、±420-V 隔離式霍爾效應電流感測器 TMCS1108 具有參考的 ±100V 基本隔離 20Arms 80kHz 霍爾效應電流感測器 TMCS1108-Q1 具有內部參考的 AEC-Q100、±100-V 隔離式霍爾效應電流感測器 TMCS1123 具有 AFR、參考及 ALERT 功能的 ±1300V 強化型隔離 80ARMS 250kHz 霍爾效應電流感測器 TMCS1123-Q1 具有 AFR 和 ALERT 功能的 AEC-Q100 80ARMS 霍爾效應電流感測器 TMCS1126 具有 AFR、參考和 ALERT 功能的 80ARMS、500kHz 霍爾效應電流感測器 TMCS1126-Q1 具有 AFR、參考和 ALERT 功能且符合 AEC-Q100 資格的 80ARMS 500kHz 霍爾效應電流感測器 TMCS1127 具有 AFR 功能的 80ARMS、250kHz 霍爾效應電流感測器 TMCS1127-Q1 具有 AFR 功能的 AEC-Q100 80ARMS、250kHz 霍爾效應電流感測器 TMCS1133 具有 AFR 和 ALERT 功能的 80ARMS、1MHz 霍爾效應電流感測器 TMCS1133-Q1 具有 AFR 和 ALERT 功能的車用 1MHz 霍爾效應電流感測器 TMCS1143 125ARMS 250kHz Hall-effect current sensor with AFR, reference, OCP and ALERT TMCS1148 具有 OCP、參考和 AFR 功能的 125ARMS、500kHz 霍爾效應電流感測器
參考設計

PMP41078 — 具有 GaN HEMT 的高電壓至低電壓 DC-DC 轉換器參考設計

此參考設計描述了一款具有 650V 氮化鎵 (GaN) 高電子移動率電晶體 (HEMT) 的 3.5kW 高電壓至低電壓 DC-DC 轉換器。使用 LMG3522R030 作為一次側開關可使轉換器在高切換頻率下工作。在此設計中,轉換器使用較小尺寸的變壓器。為了緩解主動箝位金屬氧化物半導體場效應電晶體 (MOSFET) 的熱性能,該轉換器使用雙通道主動箝位電路。
Test report: PDF
參考設計

PMP41139 — 3.5kW、800V 至 14V DC/DC 轉換器參考設計

此參考設計描述了一款具有 650V 氮化鎵 (GaN) 高電子移動率電晶體 (HEMT) 的 3.5kW、800V 至 14V DC/DC 轉換器。使用堆疊半橋 (SHB) 拓撲,讓轉換器能以 800V 搭配 650V GaN HEMT 運作。使用 LMG3522R030 作為一次側開關可使轉換器在高切換頻率下工作。在此設計中,轉換器使用較小尺寸的變壓器。為了緩解主動箝位金屬氧化物半導體場效應電晶體 (MOSFET) 的熱性能,該轉換器使用雙通道主動箝位電路。
Test report: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (DVG) 10 Ultra Librarian

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  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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