TMCS1133-Q1

現行

具有 AFR 和 ALERT 功能的車用 1MHz 霍爾效應電流感測器

產品詳細資料

Continuous current (max) (A) 82 Rating Automotive Sensitivity (typ) (mV/mT) 25, 33, 50, 75, 100, 150 Input offset current (±) (max) (mA) 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 867, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Small-signal bandwidth (kHz) 1000 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 82 Rating Automotive Sensitivity (typ) (mV/mT) 25, 33, 50, 75, 100, 150 Input offset current (±) (max) (mA) 130, 150, 160, 180, 200 Input offset current drift (±) (typ) (µA/°C) 867, 1150, 1300, 1400, 1800, 2000 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Small-signal bandwidth (kHz) 1000 Sensitivity error (%) 0.4 Sensitivity error drift (±) (max) (ppm/°C) 50 Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² (10.3 mm × 10.3 mm)
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to 125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±10µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Fast Response
    • Signal bandwidth: 1MHz
    • Response time: 120ns
    • Propagation delay: 50ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 20mV/A to 150mV/A
  • Safety related certifications
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to 125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±10µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Fast Response
    • Signal bandwidth: 1MHz
    • Response time: 120ns
    • Propagation delay: 50ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 20mV/A to 150mV/A
  • Safety related certifications
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1133-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature 1.4%and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage.

Integrated shielding enables excellent common-mode rejection and transient immunity. Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

The TMCS1133-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature 1.4%and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage.

Integrated shielding enables excellent common-mode rejection and transient immunity. Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

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設計與開發

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開發板

TMCS-A-ADAPTER-EVM — 適用於 DVG、DVF 或 DZP 封裝的 TMCS 隔離式霍爾效應電流感測器轉接卡 (不包括 IC)

TMCS-A-ADAPTER-EVM 是一款評估模組 (EVM),旨在協助快速、便利地使用採用 DVG、DVF 或 DZP 封裝的 TMCS 隔離式霍爾效應精密電流感測監控器。此 EVM 可讓使用者在透過隔離層測量隔離輸出時,將高達 90A 的電流推經霍爾輸入側。TMCS-A-ADAPTER-EVM 包含一個未組裝的 PCB,其具備可安裝測試點和分接接頭針腳的位置,以評估裝置。PCB 焊盤是重疊的,因此任何 DVG、DVF 或 DZP TMCS 零件都可以搭配 TMCS-A-ADAPTER-EVM 使用。

使用指南: PDF | HTML
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開發板

TMCS1133EVM — TMCS1133 評估模組

TMCS1133EVM 評估模組 (EVM) 是一款工具,旨在協助方便快速地使用 TMCS1133,這是採用內部參考的隔離式霍爾效應精密電流感測監控器。此 EVM 可讓使用者在量測隔離輸出時,將最大操作電流推經霍爾輸入側,同時透過強化型隔離層量測隔離輸出。此固定裝置佈局不做為目標電路模型使用,也不是為了電磁 (EMI) 測試所進行的佈局。此 EVM 包含單一印刷電路板 (PCB),可分為五個獨立部分,讓使用者可測試單一靜態點的所有靈敏度變化 (A = 2.5V、B = 1.65V 或 C = 0.33V)。

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模擬型號

TMCS1133 and TMCS1133-Q1 PSpice Transient Model (for TMCS1133B7A)

SBOMCR4.ZIP (7 KB) - PSpice 模型
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模擬型號

TMCS1133 and TMCS1133-Q1 PSpice Transient Model (for TMCS1133B8A)

SBOMCR5.ZIP (8 KB) - PSpice 模型
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TMCS1133 and TMCS1133-Q1 PSpice Transient Model (for TMCS1133C9A)

SBOMCR6.ZIP (8 KB) - PSpice 模型
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TMCS1133 and TMCS1133-Q1 PSpice Transient Model (for TMCS1133x2A)

SBOMCR0.ZIP (8 KB) - PSpice 模型
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TMCS1133 and TMCS1133-Q1 PSpice Transient Model (for TMCS1133x3A)

SBOMCR1.ZIP (8 KB) - PSpice 模型
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TMCS1133 and TMCS1133-Q1 PSpice Transient Model (for TMCS1133x4A)

SBOMCR2.ZIP (8 KB) - PSpice 模型
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TMCS1133 and TMCS1133-Q1 PSpice Transient Model (for TMCS1133x5A)

SBOMCR3.ZIP (8 KB) - PSpice 模型
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TMCS1133 and TMCS1133-Q1 PSpice Transient Model (TMCS1133x1A)

SBOMCQ9.ZIP (8 KB) - PSpice 模型
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模擬型號

TMCS1133 and TMCS1133-Q1 TINA-TI Reference Design

SBOMCR7.ZIP (127 KB) - TINA-TI 參考設計
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計算工具

CS-MAGNETIC-ERROR-TOOL-CALC — Hall-Effect Current Sensor Comparison and Error Tool

Hall-Effect Current Sensor Comparison and Error Tool
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參考設計

PMP41078 — 具有 GaN HEMT 的高電壓至低電壓 DC-DC 轉換器參考設計

此參考設計描述了一款具有 650V 氮化鎵 (GaN) 高電子移動率電晶體 (HEMT) 的 3.5kW 高電壓至低電壓 DC-DC 轉換器。使用 LMG3522R030 作為一次側開關可使轉換器在高切換頻率下工作。在此設計中,轉換器使用較小尺寸的變壓器。為了緩解主動箝位金屬氧化物半導體場效應電晶體 (MOSFET) 的熱性能,該轉換器使用雙通道主動箝位電路。

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參考設計

PMP41139 — 3.5kW、800V 至 14V DC/DC 轉換器參考設計

此參考設計描述了一款具有 650V 氮化鎵 (GaN) 高電子移動率電晶體 (HEMT) 的 3.5kW、800V 至 14V DC/DC 轉換器。使用堆疊半橋 (SHB) 拓撲,讓轉換器能以 800V 搭配 650V GaN HEMT 運作。使用 LMG3522R030 作為一次側開關可使轉換器在高切換頻率下工作。在此設計中,轉換器使用較小尺寸的變壓器。為了緩解主動箝位金屬氧化物半導體場效應電晶體 (MOSFET) 的熱性能,該轉換器使用雙通道主動箝位電路。
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