產品詳細資料

Protocols Analog Configuration 4:1 Number of channels 2 Bandwidth (MHz) 500 Ron (typ) (mΩ) 3500 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 700 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 3.5 CON (typ) (pF) 13 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 11000 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration 4:1 Number of channels 2 Bandwidth (MHz) 500 Ron (typ) (mΩ) 3500 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Supply current (typ) (µA) 700 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 64 COFF (typ) (pF) 3.5 CON (typ) (pF) 13 OFF-state leakage current (max) (µA) 1 Ron (max) (mΩ) 11000 VIH (min) (V) 1.7 VIL (max) (V) 0.8 Rating Catalog
TVSOP (DGV) 16 23.04 mm² (3.6 mm × 6.4 mm) TSSOP (PW) 16 32 mm² (5 mm × 6.4 mm) VQFN (RGY) 16 14 mm² (4 mm × 3.5 mm) SSOP (DBQ) 16 29.4 mm² (4.9 mm × 6 mm)
  • High-Bandwidth Data Path (Up to 500 MHz) (1)
  • 5-V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
  • Fast Switching Frequency (fOE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.6 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signal Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V and 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface Bus Isolation, Low-Distortion Signal Gating (1)

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report CBT-C, CB3T, and CB3Q Signal-Switch Families, (SCDA008).

  • High-Bandwidth Data Path (Up to 500 MHz) (1)
  • 5-V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
  • Fast Switching Frequency (fOE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.6 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signal Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V and 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface Bus Isolation, Low-Distortion Signal Gating (1)

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report CBT-C, CB3T, and CB3Q Signal-Switch Families, (SCDA008).

The SN74CB3Q3253 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input and output (I/O) ports.

The SN74CB3Q3253 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input and output (I/O) ports.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 SN74CB3Q3253 Dual 1-of-4 FET Multiplexer – Demultiplexer 2.5-V – 3.3-V Low-Voltage High-Bandwidth Bus Switch datasheet (Rev. C) PDF | HTML 2018/6/27
應用說明 Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022/6/2
應用說明 Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021/12/1
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021/1/6

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模擬型號

HSPICE MODEL OF SN74CB3Q3253

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SN74CB3Q3253 IBIS Model

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TVSOP (DGV) 16 Ultra Librarian
TSSOP (PW) 16 Ultra Librarian
VQFN (RGY) 16 Ultra Librarian
SSOP (DBQ) 16 Ultra Librarian

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