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SN74BCT2827C

現行

具有 3 態輸出的 10 通道 4.5-V 至 5.5-V 緩衝器

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SN74BCT2827C

現行
產品規格表 立即訂購

產品詳細資料

Technology family BCT Number of channels 10 IOL (max) (mA) 12 Supply current (max) (µA) 40000 IOH (max) (mA) -1 Input type Bipolar Output type 3-State Features Damping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns) Rating Catalog Operating temperature range (°C) 0 to 70
Technology family BCT Number of channels 10 IOL (max) (mA) 12 Supply current (max) (µA) 40000 IOH (max) (mA) -1 Input type Bipolar Output type 3-State Features Damping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns) Rating Catalog Operating temperature range (°C) 0 to 70
SOIC (DW) 24 159.65 mm² (15.5 mm × 10.3 mm)
  • BiCMOS Design Substantially Reduces ICCZ
  • Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
  • Specifically Designed to Drive MOS DRAMs
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
  • Flow-Through Architecture Optimizes PCB Layout
  • Power-Up High-Impedance State
  • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
  • BiCMOS Design Substantially Reduces ICCZ
  • Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
  • Specifically Designed to Drive MOS DRAMs
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
  • Flow-Through Architecture Optimizes PCB Layout
  • Power-Up High-Impedance State
  • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.
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* 資料表 10-Bit Bus/MOS Memory Drivers With 3-State Outputs datasheet (Rev. E) 1991/1/1

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