產品詳細資料

Technology family SCxT Number of channels 1 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type CMOS Output type Push-Pull Features Partial power down (Ioff), Ultra high speed (tpd <5ns), Very high speed (tpd 5-10ns) Rating Space Operating temperature range (°C) -55 to 125
Technology family SCxT Number of channels 1 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type CMOS Output type Push-Pull Features Partial power down (Ioff), Ultra high speed (tpd <5ns), Very high speed (tpd 5-10ns) Rating Space Operating temperature range (°C) -55 to 125
SOT-23 (DBV) 5 8.12 mm² (2.9 mm × 2.8 mm)
  • VID V62/26601
  • Radiation - total ionizing dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - single-event effects (SEE):
    • Single event latch-up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single event transient (SET) characterized up to LET = 50MeV-cm2/mg
  • Wide operating range from 1.2V to 5.5V

  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 100mA per JESD 78
  • Space enhanced plastic:
    • Supports Defense and Aerospace Applications
    • Controlled baseline
    • Au bond-wire and NiPdAu lead finish
    • Meets NASA ASTM E595 out gassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • VID V62/26601
  • Radiation - total ionizing dose (TID):
    • TID characterized up to 50krad(Si)
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - single-event effects (SEE):
    • Single event latch-up (SEL) immune up to 50MeV-cm2/mg at 125°C
    • Single event transient (SET) characterized up to LET = 50MeV-cm2/mg
  • Wide operating range from 1.2V to 5.5V

  • 5.5V tolerant input pins
  • Supports standard pinouts
  • Up to 150Mbps with 5V or 3.3V VCC
  • Latch-up performance exceeds 100mA per JESD 78
  • Space enhanced plastic:
    • Supports Defense and Aerospace Applications
    • Controlled baseline
    • Au bond-wire and NiPdAu lead finish
    • Meets NASA ASTM E595 out gassing specification
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability

The SN54SC1G08-SEP device is a single 2-input positive-AND gate. This device performs the Boolean function Y = A • B or Y = Ā + B̅ in positive logic.

The SN54SC1G08-SEP device is a single 2-input positive-AND gate. This device performs the Boolean function Y = A • B or Y = Ā + B̅ in positive logic.

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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 SN54SC1G08-SEP Radiation Tolerant Single 2-Input Positive-AND Gate datasheet PDF | HTML 2026/5/4
* 輻射及可靠性報告 SN54SC1G08-SEP Total Ionizing Dose (TID) Report 2026/4/30
* 輻射及可靠性報告 SN54SC1G08-SEP Production Flow and Reliability Report PDF | HTML 2026/4/1
* 輻射及可靠性報告 SN54SC1G08-SEP Single-Event Effects (SEE) Radiation Report PDF | HTML 2025/4/30

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開發板

5-8-LOGIC-EVM — 適用於 5 針腳至 8 針腳 DCK、DCT、DCU、DRL 和 DBV 封裝的通用邏輯評估模組

靈活的 EVM 旨在支援任何針腳數為 5 至 8 支且採用 DCK、DCT、DCU、DRL 或 DBV 封裝的裝置。
使用指南: PDF
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOT-23 (DBV) 5 Ultra Librarian

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