ONET8551T
- 9-GHz Bandwidth
- 10-kΩ Differential Small Signal
Transimpedance - –20-dBm Sensitivity
- 0.9-µARMS Input Referred Noise
- 2.5-mAp-p Input Overload Current
- Received Signal Strength Indication
(RSSI) - 92-mW Typical Power Dissipation
- CML Data Outputs With On-Chip
50-Ω Back-Termination - On Chip Supply Filter Capacitor
- Single +3.3-V Supply
- Die Size: 870 µm x 1036 µm
The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI.
The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can.
The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | 11.3 Gbps Limiting Transimpedance Amplifier With RSSI, ONET8551T datasheet | 2013/10/24 |
設計與開發
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TIDA-00088 — 適用於 TI ONET 零件的完整參考設計，採用相容於 10G SFP+ LR 光學模組的形狀
本德州儀器參考設計旨在展示 ONET1151L 雷射驅動器、ONET8551T 高增益轉阻放大器 (TIA) 和 ONET1151P 限幅放大器的光學性能。它的外形規格與 10.3125Gbps SFP+ LR 光學模組相容，並通過提供 SFP+ 主機板和使用者友好的 GUI 縮短客戶評估時間。除了 ONET 零件外，參考設計也包含可控制設定的 MSP430FR5728 微控制器 (MCU)，以及高效率 MicroSiP 降壓轉換器 TPS82693，可用來為 IC 供應 2.85V，以減少模組功耗。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WAFERSALE (YS) | — | Ultra Librarian |
| DIESALE (Y) | — | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。