LPC662
|
Rail-to-rail output swing |
|
|
Micropower operation (<0.5 mW) |
|
|
Specified for 100 k |
|
|
High voltage gain |
120 dB |
|
Low input offset voltage |
3 mV |
|
Low offset voltage drift |
1.3 µV/°C |
|
Ultra low input bias current |
2 fA |
|
Input common-mode includes GND |
|
|
Operating range from +5V to +15V |
|
|
Low distortion |
0.01% at 1 kHz |
|
Slew rate |
0.11 V/µs |
|
Full military temperature range available |
The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k
and 5 k
) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | LPC662 Low Power CMOS Dual Operational Amplifier datasheet (Rev. B) | 2004年 5月 1日 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
- 晶圓廠位置
- 組裝地點