LM74912-Q1
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1: –40°C to +125°C ambient operating temperature range
- Functional Safety-Capable
- 3-V to 65-V input range
- Reverse input protection down to –65 V
- Drives external back-to-back N-channel MOSFETs in common drain configuration
- Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
- Low reverse detection threshold (–10.5 mV) with fast response (0.5 µs)
- 20-mA peak gate (DGATE) turn-on current
- 2.6-A peak DGATE turn-off current
- Adjustable overvoltage and undervoltage protection
- Output short circuit protection with MOSFET latched off state
- Ultra low power mode with 2.5-µA shutdown current (EN=Low)
- SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
- Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diode
- Available in 4 mm × 4 mm 24-pin VQFN package
The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LM74912-Q1 Automotive Ideal Diode Controller With Fault Output and Overvoltage, Undervoltage, and Short Circuit Protection datasheet (Rev. A) | PDF | HTML | 2023/9/20 | ||
| 應用說明 | Improving Accuracy of Shunt-Less Short Circuit Protection in Wide Temperature Range Using LM74912-Q1 | PDF | HTML | 2025/9/17 | |||
| 功能安全資訊 | LM74912-Q1 Functional safety FIT rate, FMD and Pin-FMA | PDF | HTML | 2025/2/18 | |||
| Application brief | Enabling Ultra Low Quiescent Current Through LM74912- Q1 Sleep Mode While Powering Always On Loads | PDF | HTML | 2023/12/11 | |||
| 證書 | LM74912Q1EVM EU Declaration of Conformity (DoC) | 2023/6/26 |
設計與開發
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LM74912Q1EVM — 適用於理想二極體控制器的 LM74912-Q1 評估模組
在反向電池保護應用中，LM74912-Q1 評估模組可評估 LM74912-Q1 理想二極體控制器的運作及性能。此評估模組示範 LM74912-Q1 如何控制兩個背對背 N 通道電源 MOSFET，以模擬具有電源路徑開/關控制、輸出短路和過電壓防護的理想二極體整流器。
LM74912-CALC — Design calculator for LM74912-Q1 ideal diode controller
PMP31252 — 適合車用的 150W 雙相同步降壓轉換器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。