LM74202-Q1
- AEC-Q100 qualified for automotive applications
- Temperature grade 1: –40°C ≤ TA ≤ +125°C
- AEC-Q100-012 short circuit reliability Grade A
- HBM ESD classification level 2
- CDM ESD classification level C6
- 4.2-V to 40-V operating voltage, 42-V maximum
- Integrated reverse input polarity protection down to –40 V
- Integrated back-to-back MOSFETs with 150 mΩ total RON
- Transient immunity up-to 55 V
- 0.1-A to 2.23-A adjustable current limit
(±5% accuracy at 1 A) - Load protection during ISO7637 and ISO16750-2 testing
- Short to battery and short to ground protection
- Reverse current blocking for protection from output short to battery
- IMON current indicator output (±8.5% accuracy)
- Low quiescent current (285 µA in operating, 16 µA in shutdown)
- Adjustable UVLO, OVP cut off, inrush current control
- Selectable current-limiting fault response options (auto-retry, latch off, CB modes)
- Available in easy to use 16-Pin HTSSOP package
The LM74202-Q1 device is a compact, feature-rich 40-V integrated ideal diode with a full suite of protection features. The wide supply input range allows control of 12-V automotive battery driven applications. The device withstands and protects the loads from positive and negative supply voltages up to ±40 V. Load, source and device protection are provided with many programmable features including overcurrent, inrush current control, overvoltage and undervoltage thresholds. The internal robust protection control blocks along with the 40-V rating of the device simplifies the system design for ISO standard pulse tesing.
A shutdown pin provides external control for enabling and disabling the internal FETs and places the device in a low current shutdown mode. For system status monitoring and downstream load control, the device provides fault output and precise current monitor output. The MODE pin allows flexibility to configure the device between the three current-limiting fault responses (circuit breaker, latch off, and auto-retry modes). The device monitors V(IN) and V(OUT) to provide reverse current blocking when V(IN) < (V(OUT)-10mV). This function protects system bus from overvoltages during output short to battery faults and also helps in voltage holdup requirements during power fail and brownout conditions.
The device is available in a 5 mm × 4.4 mm 16-pin HTSSOP and is fully specified over a –40°C to +125°C temperature range.
您可能會感興趣的類似產品
針腳對針腳的功能與所比較的裝置相同。
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LM74202-Q1 40-V, 2.2-A Integrated Ideal Diode with Overvoltage and Overcurrent Protection datasheet | PDF | HTML | 2019/6/27 | ||
| 應用說明 | Basics of Ideal Diodes (Rev. B) | PDF | HTML | 2021/10/5 | |||
| Application brief | Plug and Play Automotive Protection with Integrated FET Ideal Diode - LM76202-Q1 | 2019/6/7 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
LM76202-Q1EVM — LM76202-Q1 理想二極體評估模組
LM76202-Q1EVM 允許 TI 的 LM76202-Q1 和 LM74202-Q1 理想二極體的參考電路評估。LM76202-Q1 為 4.5V 至 60V、2.23A 的理想二極體，LM74202-Q1 則為 4.5V 至 40V、2.23A 的理想二極體。 兩種裝置皆具備逆流電池防護、過電壓、短路以及反向電流阻斷防護。
SLVC789 — LM76202-Q1 and LM74202-Q1 Design Calculator
PMP41078 — 具有 GaN HEMT 的高電壓至低電壓 DC-DC 轉換器參考設計
此參考設計描述了一款具有 650V 氮化鎵 (GaN) 高電子移動率電晶體 (HEMT) 的 3.5kW 高電壓至低電壓 DC-DC 轉換器。使用 LMG3522R030 作為一次側開關可使轉換器在高切換頻率下工作。在此設計中，轉換器使用較小尺寸的變壓器。為了緩解主動箝位金屬氧化物半導體場效應電晶體 (MOSFET) 的熱性能，該轉換器使用雙通道主動箝位電路。
PMP41139 — 3.5kW、800V 至 14V DC/DC 轉換器參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTSSOP (PWP) | 16 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。