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理想二極體與 ORing 控制器

LM66100-Q1

現行

具整合式 FET 的車用 1.5V 至 5.5V、1.5-A、0.5μA IQ 理想二極體

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產品規格表

LM66100-Q1

現行
產品規格表 立即訂購

產品詳細資料

Vin (max) (V) 5.5 Vin (min) (V) 1.5 FET Integrated single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Enable, Gate ON/OFF control, Power good signal, Reverse current blocking, Reverse polarity protection Imax (A) 1.5 Iq (typ) (mA) 0.00015 Iq (max) (mA) 0.0003 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) 46 Design support EVM Shutdown current (ISD) (mA) (A) 0.00012 Product type Ideal diode controller
Vin (max) (V) 5.5 Vin (min) (V) 1.5 FET Integrated single FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Enable, Gate ON/OFF control, Power good signal, Reverse current blocking, Reverse polarity protection Imax (A) 1.5 Iq (typ) (mA) 0.00015 Iq (max) (mA) 0.0003 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) 46 Design support EVM Shutdown current (ISD) (mA) (A) 0.00012 Product type Ideal diode controller
SOT-SC70 (DCK) 6 4.2 mm² (2 mm × 2.1 mm)
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1: –40°C to 125°C ambient operating temperature range
  • Wide operating voltage range: 1.5 V–5.5 V
  • Reverse voltage standoff on VIN: –6-V absolute maximum
  • Maximum continuous current (IMAX): 1.5 A
  • On-Resistance (RON):
    • 5-V VIN = 79 mΩ (typical)
    • 3.6-V VIN = 91 mΩ (typical)
    • 1.8-V VIN = 141 mΩ (typical)
  • Comparator chip enable (CE)
  • Channel status indication (ST)
  • Low current consumption:
    • 3.6-V VIN shutdown current (ISD,VIN): 120 nA (typical)
    • 3.6-V VIN quiescent current (IQ, VIN): 150 nA (typical)
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1: –40°C to 125°C ambient operating temperature range
  • Wide operating voltage range: 1.5 V–5.5 V
  • Reverse voltage standoff on VIN: –6-V absolute maximum
  • Maximum continuous current (IMAX): 1.5 A
  • On-Resistance (RON):
    • 5-V VIN = 79 mΩ (typical)
    • 3.6-V VIN = 91 mΩ (typical)
    • 1.8-V VIN = 141 mΩ (typical)
  • Comparator chip enable (CE)
  • Channel status indication (ST)
  • Low current consumption:
    • 3.6-V VIN shutdown current (ISD,VIN): 120 nA (typical)
    • 3.6-V VIN quiescent current (IQ, VIN): 150 nA (typical)

The LM66100-Q1 is a Single-Input, Single-Output (SISO) integrated ideal diode that is well suited for a variety of applications. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 5.5 V and can support a maximum continuous current of 1.5 A.

The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher than VIN, the device disables and the MOSFET is off. When the CE pin voltage is lower, the MOSFET is on. The LM66100-Q1 also comes with reverse polarity protection (RPP) that can protect the device from a miswired input, such as a reversed battery.

Two LM66100-Q1 devices can be used in an ORing configuration similar to a dual diode ORing implementation. In this configuration, the devices pass the highest input voltage to the output while blocking reverse current flow into the input supplies. These devices can compare input and output voltages to make sure that reverse current is blocked through an internal voltage comparator.

The LM66100-Q1 is available in a standard SC-70 package characterized for operation over a junction temperature range of –40°C to 150°C.

The LM66100-Q1 is a Single-Input, Single-Output (SISO) integrated ideal diode that is well suited for a variety of applications. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 5.5 V and can support a maximum continuous current of 1.5 A.

The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher than VIN, the device disables and the MOSFET is off. When the CE pin voltage is lower, the MOSFET is on. The LM66100-Q1 also comes with reverse polarity protection (RPP) that can protect the device from a miswired input, such as a reversed battery.

Two LM66100-Q1 devices can be used in an ORing configuration similar to a dual diode ORing implementation. In this configuration, the devices pass the highest input voltage to the output while blocking reverse current flow into the input supplies. These devices can compare input and output voltages to make sure that reverse current is blocked through an internal voltage comparator.

The LM66100-Q1 is available in a standard SC-70 package characterized for operation over a junction temperature range of –40°C to 150°C.
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* 資料表 LM66100-Q1 5.5-V, 1.5-A 79-mΩ, Automotive, Low IQ Ideal Diode with Input Polarity Protection datasheet (Rev. A) PDF | HTML 2022/3/9

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LM66100EVM — LM66100 ±6V、1.5A 低 IQ 理想二極體評估模組

LM66100 評估模組 (EVM) 是組裝且經過測試的電路，用於評估 LM66100 理想二極體。LM66100EVM 允許使用者在不同負載條件下（0A 至 1.5A）套用不同的輸入電壓（1.5V 至 5.5V），並評估像是雙 ORing 和反向極性保護之配置。
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